• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利：CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法，用中文像聊天一样搜索，搜遍4000万医学文献。AI智能推荐，让科研检索更轻松。

立即免费搜索

文件翻译

保留排版，准确专业，支持PDF/Word/PPT等文件格式，支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述，25分钟生成高质量综述，智能提取关键信息，辅助科研写作。

立即免费体验

新兴光子忆阻和类忆阻器件的进展。

Advances in Emerging Photonic Memristive and Memristive-Like Devices.

机构信息

School of Information Science and Engineering, Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan, 250022, China.

School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, China.

出版信息

Adv Sci (Weinh). 2022 Oct;9(28):e2105577. doi: 10.1002/advs.202105577. Epub 2022 Aug 9.

DOI:10.1002/advs.202105577
PMID:35945187
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9534950/
Abstract

Possessing the merits of high efficiency, low consumption, and versatility, emerging photonic memristive and memristive-like devices exhibit an attractive future in constructing novel neuromorphic computing and miniaturized bionic electronic system. Recently, the potential of various emerging materials and structures for photonic memristive and memristive-like devices has attracted tremendous research efforts, generating various novel theories, mechanisms, and applications. Limited by the ambiguity of the mechanism and the reliability of the material, the development and commercialization of such devices are still rare and in their infancy. Therefore, a detailed and systematic review of photonic memristive and memristive-like devices is needed to further promote its development. In this review, the resistive switching mechanisms of photonic memristive and memristive-like devices are first elaborated. Then, a systematic investigation of the active materials, which induce a pivotal influence in the overall performance of photonic memristive and memristive-like devices, is highlighted and evaluated in various indicators. Finally, the recent advanced applications are summarized and discussed. In a word, it is believed that this review provides an extensive impact on many fields of photonic memristive and memristive-like devices, and lay a foundation for academic research and commercial applications.

摘要

新兴的光子忆阻器和类忆阻器器件具有高效、低能耗和多功能的优点，在构建新型神经形态计算和小型仿生电子系统方面具有诱人的前景。最近，各种新兴材料和结构在光子忆阻器和类忆阻器器件中的潜力引起了研究人员的极大关注，产生了各种新的理论、机制和应用。受限于机制的模糊性和材料的可靠性，这类器件的发展和商业化仍然很少见，处于起步阶段。因此，需要对光子忆阻器和类忆阻器器件进行详细而系统的综述，以进一步推动其发展。在这篇综述中，首先阐述了光子忆阻器和类忆阻器器件的电阻开关机制。然后，系统地研究了各种指标下对光子忆阻器和类忆阻器器件整体性能有重要影响的有源材料，并对其进行了评估。最后，总结和讨论了最近的先进应用。总之，相信这篇综述对光子忆阻器和类忆阻器器件的许多领域都有广泛的影响，为学术研究和商业应用奠定了基础。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/d09c9f8dff64/ADVS-9-2105577-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/38dcabd5e9fc/ADVS-9-2105577-g020.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/0863e28f2b62/ADVS-9-2105577-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/4cb7cb17d42f/ADVS-9-2105577-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/76e8dfdee94f/ADVS-9-2105577-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/8a457dff7382/ADVS-9-2105577-g022.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/a71cabfb3877/ADVS-9-2105577-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/88801e803a8b/ADVS-9-2105577-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/947daaab27ab/ADVS-9-2105577-g019.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/57c012bab905/ADVS-9-2105577-g015.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/e682dc097b8f/ADVS-9-2105577-g023.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/5730b6d6511f/ADVS-9-2105577-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/68ce4f9a051e/ADVS-9-2105577-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/d099dcb323cd/ADVS-9-2105577-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/1a0b46a60a4e/ADVS-9-2105577-g021.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/54c5c2c84dfa/ADVS-9-2105577-g014.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/d09c9f8dff64/ADVS-9-2105577-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/38dcabd5e9fc/ADVS-9-2105577-g020.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/0863e28f2b62/ADVS-9-2105577-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/4cb7cb17d42f/ADVS-9-2105577-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/76e8dfdee94f/ADVS-9-2105577-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/8a457dff7382/ADVS-9-2105577-g022.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/a71cabfb3877/ADVS-9-2105577-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/88801e803a8b/ADVS-9-2105577-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/947daaab27ab/ADVS-9-2105577-g019.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/57c012bab905/ADVS-9-2105577-g015.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/e682dc097b8f/ADVS-9-2105577-g023.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/5730b6d6511f/ADVS-9-2105577-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/68ce4f9a051e/ADVS-9-2105577-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/d099dcb323cd/ADVS-9-2105577-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/1a0b46a60a4e/ADVS-9-2105577-g021.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/54c5c2c84dfa/ADVS-9-2105577-g014.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cde3/9534950/d09c9f8dff64/ADVS-9-2105577-g009.jpg

相似文献

1
Advances in Emerging Photonic Memristive and Memristive-Like Devices.新兴光子忆阻和类忆阻器件的进展。
Adv Sci (Weinh). 2022 Oct;9(28):e2105577. doi: 10.1002/advs.202105577. Epub 2022 Aug 9.
2
Emerging Memristive Artificial Synapses and Neurons for Energy-Efficient Neuromorphic Computing.新兴忆阻人工突触和神经元用于高能效神经形态计算。
Adv Mater. 2020 Dec;32(51):e2004659. doi: 10.1002/adma.202004659. Epub 2020 Oct 1.
3
Organic iontronic memristors for artificial synapses and bionic neuromorphic computing.用于人工突触和仿生神经形态计算的有机离子电导忆阻器。
Nanoscale. 2024 Jan 25;16(4):1471-1489. doi: 10.1039/d3nr06057h.
4
Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics.基于二维材料的忆阻器作为神经形态电子学的人工突触。
Adv Mater. 2020 Dec;32(51):e2002092. doi: 10.1002/adma.202002092. Epub 2020 Sep 27.
5
Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems.忆阻器材料、器件和系统的最新进展和未来展望。
ACS Nano. 2023 Jul 11;17(13):11994-12039. doi: 10.1021/acsnano.3c03505. Epub 2023 Jun 29.
6
Interfacing Biology and Electronics with Memristive Materials.介电阻变材料于生物与电子之间
Adv Mater. 2023 Aug;35(32):e2210035. doi: 10.1002/adma.202210035. Epub 2023 Jun 29.
7
Emerging memristive neurons for neuromorphic computing and sensing.用于神经形态计算与传感的新型忆阻神经元
Sci Technol Adv Mater. 2023 Apr 19;24(1):2188878. doi: 10.1080/14686996.2023.2188878. eCollection 2023.
8
Nanoscale resistive switching devices: mechanisms and modeling.纳米尺度电阻开关器件：原理与建模。
Nanoscale. 2013 Nov 7;5(21):10076-92. doi: 10.1039/c3nr03472k. Epub 2013 Sep 9.
9
Thousands of conductance levels in memristors integrated on CMOS.在 CMOS 上集成的数千个电导水平的忆阻器。
Nature. 2023 Mar;615(7954):823-829. doi: 10.1038/s41586-023-05759-5. Epub 2023 Mar 29.
10
Reliable Memristive Synapses Based on Parylene-MoO Nanocomposites for Neuromorphic Applications.用于神经形态应用的基于聚对二甲苯-氧化钼纳米复合材料的可靠忆阻突触
ACS Appl Mater Interfaces. 2023 Nov 29;15(47):54996-55008. doi: 10.1021/acsami.3c13956. Epub 2023 Nov 14.

引用本文的文献

1
A memristive-photoconductive transduction methodology for accurately nondestructive memory readout.一种用于精确无损存储器读出的忆阻-光电导转换方法。
Light Sci Appl. 2024 Jul 23;13(1):175. doi: 10.1038/s41377-024-01519-w.
2
Tailoring Classical Conditioning Behavior in TiO Nanowires: ZnO QDs-Based Optoelectronic Memristors for Neuromorphic Hardware.定制TiO纳米线中的经典条件反射行为：用于神经形态硬件的基于ZnO量子点的光电忆阻器
Nanomicro Lett. 2024 Feb 27;16(1):133. doi: 10.1007/s40820-024-01338-z.
3
Neuromorphic Computing via Fission-based Broadband Frequency Generation.

本文引用的文献

1
Perception-to-Cognition Tactile Sensing Based on Artificial-Intelligence-Motivated Human Full-Skin Bionic Electronic Skin.基于人工智能启发的人类全肤质仿生电子皮肤的知觉-认知触觉传感
Adv Mater. 2022 Aug;34(31):e2202622. doi: 10.1002/adma.202202622. Epub 2022 Jun 22.
2
Reconfigurable and Efficient Implementation of 16 Boolean Logics and Full-Adder Functions with Memristor Crossbar for Beyond von Neumann In-Memory Computing.基于忆阻器交叉开关实现16种布尔逻辑和全加器功能的可重构高效实现，用于超越冯·诺依曼架构的内存计算。
Adv Sci (Weinh). 2022 May;9(15):e2200036. doi: 10.1002/advs.202200036. Epub 2022 Mar 27.
3
A Bioinspired Artificial Injury Response System Based on a Robust Polymer Memristor to Mimic a Sense of Pain, Sign of Injury, and Healing.
基于裂变的宽带频率生成的神经形态计算。
Adv Sci (Weinh). 2023 Dec;10(35):e2303835. doi: 10.1002/advs.202303835. Epub 2023 Oct 2.
4
Carbon Nanodots Memristor: An Emerging Candidate toward Artificial Biosynapse and Human Sensory Perception System.碳纳米点忆阻器：人工生物突触和人类感知系统的新兴候选者。
Adv Sci (Weinh). 2023 Jun;10(16):e2207229. doi: 10.1002/advs.202207229. Epub 2023 Apr 18.
基于稳健聚合物忆阻器的仿生人工损伤响应系统，可模拟疼痛感知、损伤信号和愈合过程。
Adv Sci (Weinh). 2022 May;9(15):e2200629. doi: 10.1002/advs.202200629. Epub 2022 Mar 25.
4
Nanostructured perovskites for nonvolatile memory devices.用于非易失性存储器件的纳米结构钙钛矿。
Chem Soc Rev. 2022 May 10;51(9):3341-3379. doi: 10.1039/d1cs00886b.
5
2D Materials-Based Static Random-Access Memory.基于二维材料的静态随机存取存储器。
Adv Mater. 2022 Dec;34(48):e2107894. doi: 10.1002/adma.202107894. Epub 2022 Jan 21.
6
Metal Halide Perovskite/2D Material Heterostructures: Syntheses and Applications.金属卤化物钙钛矿/二维材料异质结构：合成与应用
Small Methods. 2021 Apr;5(4):e2000937. doi: 10.1002/smtd.202000937. Epub 2021 Jan 15.
7
Resistive Memory Devices Based on Reticular Materials for Electrical Information Storage.基于网状材料的用于电信息存储的电阻式存储器件
ACS Appl Mater Interfaces. 2021 Dec 8;13(48):56777-56792. doi: 10.1021/acsami.1c16332. Epub 2021 Nov 29.
8
Flexible boron nitride-based memristor for in situ digital and analogue neuromorphic computing applications.用于原位数字和模拟神经形态计算应用的柔性氮化硼基忆阻器。
Mater Horiz. 2021 Feb 1;8(2):538-546. doi: 10.1039/d0mh01730b. Epub 2021 Jan 13.
9
Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems.神经形态电路与系统中忆阻器的进展与挑战
Adv Mater. 2022 Dec;34(48):e2108025. doi: 10.1002/adma.202108025. Epub 2022 Feb 19.
10
Free-Standing Multilayer Molybdenum Disulfide Memristor for Brain-Inspired Neuromorphic Applications.用于脑启发神经形态应用的独立多层二硫化钼忆阻器
ACS Appl Mater Interfaces. 2021 Sep 29;13(38):45843-45853. doi: 10.1021/acsami.1c11359. Epub 2021 Sep 20.