Xia Xueming, Taylor Alaric, Zhao Yifan, Guldin Stefan, Blackman Chris
Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, UK.
Department of Chemical Engineering, University College London, Torrington Place, London WC1E 7JE, UK.
Materials (Basel). 2019 May 2;12(9):1429. doi: 10.3390/ma12091429.
An AlO thin film has been grown by vapor deposition using different Al precursors. The most commonly used precursor is trimethylaluminum, which is highly reactive and pyrophoric. In the purpose of searching for a more ideal Al source, the non-pyrophoric aluminum tri-sec-butoxide ([Al(OBu)], ATSB) was introduced as a novel precursor for atomic layer deposition (ALD). After demonstrating the deposition of AlO via chemical vapor deposition (CVD) and 'pulsed CVD' routes, the use of ATSB in an atomic layer deposition (ALD)-like process was investigated and optimized to achieve self-limiting growth. The films were characterized using spectral reflectance, ellipsometry and UV-Vis before their composition was studied. The growth rate of AlO via the ALD-like process was consistently 0.12 nm/cycle on glass, silicon and quartz substrates under the optimized conditions. Scanning electron microscopy and transmission electron microscopy images of the ALD-deposited AlO films deposited on complex nanostructures demonstrated the conformity, uniformity and good thickness control of these films, suggesting a potential of being used as the protection layer in photoelectrochemical water splitting.
采用不同的铝前驱体通过气相沉积法生长了AlO薄膜。最常用的前驱体是三甲基铝，它具有高反应性且易自燃。为了寻找更理想的铝源，引入了不易自燃的三叔丁醇铝（[Al(OBu)]，ATSB）作为原子层沉积（ALD）的新型前驱体。在通过化学气相沉积（CVD）和“脉冲CVD”路线证明了AlO的沉积之后，研究并优化了ATSB在类似原子层沉积（ALD）过程中的使用，以实现自限制生长。在研究薄膜成分之前，使用光谱反射率、椭偏仪和紫外可见光谱对薄膜进行了表征。在优化条件下，通过类似ALD的过程生长AlO的速率在玻璃、硅和石英衬底上始终为0.12 nm/循环。沉积在复杂纳米结构上的ALD沉积AlO薄膜的扫描电子显微镜和透射电子显微镜图像表明了这些薄膜的一致性、均匀性和良好的厚度控制，这表明其有潜力用作光电化学水分解中的保护层。
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