Lin Shih-Chin, Wang Ching-Chiun, Tien Chuen-Lin, Tung Fu-Ching, Wang Hsuan-Fu, Lai Shih-Hsiang
Mechanical and Systems Research Lab, Industrial Technology Research Institute, Hsinchu 310401, Taiwan.
Department of Electrical Engineering, Feng Chia University, Taichung 40724, Taiwan.
Micromachines (Basel). 2023 Jan 21;14(2):279. doi: 10.3390/mi14020279.
This study demonstrates the low-temperature (<100 °C) process for growing a thin silica buffer layer and aluminum oxide by atomic layer deposition (ALD) in the same reaction chamber. Heterogeneous multilayer thin films are prepared by a dual-mode equipment based on atomic layer deposition and plasma-enhanced chemical vapor deposition (PECVD) techniques. The pulse discrete feeding method (DFM) was used to divide the precursor purging steps into smaller intervals and generate discrete feeds, which improved the saturated distribution of gas precursors, film density and deposition selectivity. The experimental results show that the process method produces a uniform microstructure and that the best film uniformity is ±2.3% and growth rate is 0.69 Å/cycle. The thickness of aluminum oxide film has a linear relationship with the cyclic growth number from 360 to 1800 cycles. Meanwhile, the structural and mechanical stress properties of aluminum oxide thin films were also verified to meet the requirements of advanced thin-film devices.
本研究展示了在同一反应室中通过原子层沉积（ALD）生长薄二氧化硅缓冲层和氧化铝的低温（<100°C）工艺。基于原子层沉积和等离子体增强化学气相沉积（PECVD）技术的双模设备制备了异质多层薄膜。采用脉冲离散进料法（DFM）将前驱体吹扫步骤划分为更小的间隔并产生离散进料，这改善了气体前驱体的饱和分布、薄膜密度和沉积选择性。实验结果表明，该工艺方法产生均匀的微观结构，最佳薄膜均匀性为±2.3%，生长速率为0.69 Å/循环。氧化铝薄膜的厚度与360至1800个循环的循环生长次数呈线性关系。同时，还验证了氧化铝薄膜的结构和机械应力性能满足先进薄膜器件的要求。
