Abramoff Orr, Barak Liron, Bloch Itay M, Chaplinsky Luke, Crisler Michael, Drlica-Wagner Alex, Essig Rouven, Estrada Juan, Etzion Erez, Fernandez Guillermo, Gift Daniel, Sofo-Haro Miguel, Taenzer Joseph, Tiffenberg Javier, Volansky Tomer, Yu Tien-Tien
Raymond and Beverly Sackler School of Physics and Astronomy, Tel-Aviv University, Tel-Aviv 69978, Israel.
C.N. Yang Institute for Theoretical Physics, Stony Brook University, Stony Brook, New York 11794, USA.
Phys Rev Lett. 2019 Apr 26;122(16):161801. doi: 10.1103/PhysRevLett.122.161801.
We present new direct-detection constraints on eV-to-GeV dark matter interacting with electrons using a prototype detector of the Sub-Electron-Noise Skipper-CCD Experimental Instrument. The results are based on data taken in the MINOS cavern at the Fermi National Accelerator Laboratory. We focus on data obtained with two distinct readout strategies. For the first strategy, we read out the Skipper CCD continuously, accumulating an exposure of 0.177 g day. While we observe no events containing three or more electrons, we find a large one- and two-electron background event rate, which we attribute to spurious events induced by the amplifier in the Skipper-CCD readout stage. For the second strategy, we take five sets of data in which we switch off all amplifiers while exposing the Skipper CCD for 120 ks, and then read out the data through the best prototype amplifier. We find a one-electron event rate of (3.51±0.10)×10^{-3} events/pixel/day, which is almost 2 orders of magnitude lower than the one-electron event rate observed in the continuous-readout data, and a two-electron event rate of (3.18_{-0.55}^{+0.86})×10^{-5} events/pixel/day. We again observe no events containing three or more electrons, for an exposure of 0.069 g day. We use these data to derive world-leading constraints on dark matter-electron scattering for masses between 500 keV and 5 MeV, and on dark-photon dark matter being absorbed by electrons for a range of masses below 12.4 eV.
我们使用亚电子噪声跳变电荷耦合器件实验仪器的原型探测器,给出了电子伏特到吉电子伏特暗物质与电子相互作用的新的直接探测限制。结果基于在费米国家加速器实验室的MINOS洞穴中采集的数据。我们关注通过两种不同读出策略获得的数据。对于第一种策略,我们连续读出跳变电荷耦合器件,累积曝光量为0.177克·天。虽然我们没有观察到包含三个或更多电子的事件,但我们发现了大量的单电子和双电子背景事件率,我们将其归因于跳变电荷耦合器件读出阶段放大器诱导的虚假事件。对于第二种策略,我们采集了五组数据,在曝光跳变电荷耦合器件120千秒的同时关闭所有放大器,然后通过最佳原型放大器读出数据。我们发现单电子事件率为(3.51±0.10)×10⁻³事件/像素/天,这比连续读出数据中观察到的单电子事件率低近2个数量级,双电子事件率为(3.18₋₀.₅₅⁺₀.₈₆)×10⁻⁵事件/像素/天。对于0.069克·天的曝光量,我们同样没有观察到包含三个或更多电子的事件。我们使用这些数据得出了世界领先的限制,即对于500千电子伏特至5兆电子伏特之间的质量,限制暗物质与电子的散射;对于低于12.4电子伏特范围内的一系列质量,限制暗光子暗物质被电子吸收的情况。