Zhu Chenguang, Sun Xingxia, Liu Huawei, Zheng Biyuan, Wang Xingwang, Liu Ying, Zubair Muhammad, Wang Xiao, Zhu Xiaoli, Li Dong, Pan Anlian
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering , Hunan University , Changsha 410082 , People's Republic of China.
ACS Nano. 2019 Jun 25;13(6):7216-7222. doi: 10.1021/acsnano.9b02817. Epub 2019 Jun 4.
Construction of atomically thin p-n junctions helps to build highly compact electronic and photonic devices for on-chip optoelectronic applications. In this work, lateral nonvolatile MoTe p-n diodes are constructed on the basis of the MoTe/h-BN/graphene semifloating gate field-effect transistor (SFG-FET) configuration. The achieved diodes exhibit excellent rectifying behaviors (rectification ratio up to 8 × 10) and typical photovoltaic properties (with power conversion efficiency of 0.5%). Through manipulating the polarity of the stored charges in the semifloating gate, such rectifying behaviors and photovoltaic properties can be erased, resulting in a high conduction state ( n -n junction). Such erasable and programmable behaviors further enable us to develop logic optoelectronic devices, realizing the switching of the device between different power conversion states and functional AND and OR optical logic gates. We believe that the achieved MoTe-based SFG-FET devices with interesting logic optoelectronic functions will enrich the modern photoelectrical interconnected circuits.
原子级薄的 p-n 结的构建有助于制造用于片上光电应用的高度紧凑的电子和光子器件。在这项工作中，基于 MoTe/h-BN/石墨烯半浮栅场效应晶体管（SFG-FET）结构构建了横向非易失性 MoTe p-n 二极管。所制备的二极管表现出优异的整流行为（整流比高达 8×10）和典型的光伏特性（功率转换效率为 0.5%）。通过操纵半浮栅中存储电荷的极性，这种整流行为和光伏特性可以被消除，从而导致高导通状态（n-n 结）。这种可擦除和可编程的行为进一步使我们能够开发逻辑光电器件，实现器件在不同功率转换状态之间的切换以及功能与门和或门光学逻辑门。我们相信，所实现的具有有趣逻辑光电子功能的基于 MoTe 的 SFG-FET 器件将丰富现代光电互连电路。
