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基于范德华异质结构的多操作模式晶体管的可逆电荷极性控制

Reversible Charge-Polarity Control for Multioperation-Mode Transistors Based on van der Waals Heterostructures.

作者信息

Chen Ciao-Fen, Yang Shih-Hsien, Lin Che-Yi, Lee Mu-Pai, Tsai Meng-Yu, Yang Feng-Shou, Chang Yuan-Ming, Li Mengjiao, Lee Ko-Chun, Ueno Keiji, Shi Yumeng, Lien Chen-Hsin, Wu Wen-Wei, Chiu Po-Wen, Li Wenwu, Lo Shun-Tsung, Lin Yen-Fu

机构信息

Department of Electrophysics and Center for Emergent Functional Matter Science (CEFMS), National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.

Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan.

出版信息

Adv Sci (Weinh). 2022 Aug;9(24):e2106016. doi: 10.1002/advs.202106016. Epub 2022 Jul 13.

DOI:10.1002/advs.202106016
PMID:35831244
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9404391/
Abstract

Van der Waals (vdW) heterostructures-in which layered materials are purposely selected to assemble with each other-allow unusual properties and different phenomena to be combined and multifunctional electronics to be created, opening a new chapter for the spread of internet-of-things applications. Here, an O -ultrasensitive MoTe material and an O -insensitive SnS material are integrated to form a vdW heterostructure, allowing the realization of charge-polarity control for multioperation-mode transistors through a simple and effective rapid thermal annealing strategy under dry-air and vacuum conditions. The charge-polarity control (i.e., doping and de-doping processes), which arises owing to the interaction between O adsorption/desorption and tellurium defects at the MoTe surface, means that the MoTe /SnS heterostructure transistors can reversibly change between unipolar, ambipolar, and anti-ambipolar transfer characteristics. Based on the dynamic control of the charge-polarity properties, an inverter, output polarity controllable amplifier, p-n diode, and ternary-state logics (NMIN and NMAX gates) are demonstrated, which inspire the development of reversibly multifunctional devices and indicates the potential of 2D materials.

摘要

范德华(vdW)异质结构——其中层状材料经过特意选择以便相互组装——能使不同寻常的特性和不同现象得以结合,并创造出多功能电子产品,为物联网应用的推广开启了新的篇章。在此,一种对氧超敏感的碲化钼(MoTe)材料与一种对氧不敏感的硫化锡(SnS)材料被整合在一起,形成了一种范德华异质结构,从而能够通过在干燥空气和真空条件下采用简单有效的快速热退火策略,实现对多操作模式晶体管的电荷极性控制。这种电荷极性控制(即掺杂和去掺杂过程)是由于氧吸附/解吸与碲化钼表面碲缺陷之间的相互作用而产生的,这意味着碲化钼/硫化锡异质结构晶体管能够在单极、双极和反双极传输特性之间可逆地转变。基于对电荷极性特性的动态控制,展示了一个反相器、输出极性可控放大器、p-n二极管以及三态逻辑(NMIN和NMAX门),这为可逆多功能器件的发展提供了启发,并彰显了二维材料的潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/527b/9404391/5da05e17e66e/ADVS-9-2106016-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/527b/9404391/53a96bab9778/ADVS-9-2106016-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/527b/9404391/1c16f2bb1585/ADVS-9-2106016-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/527b/9404391/c80fc779ba94/ADVS-9-2106016-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/527b/9404391/ee5f4acdbf1b/ADVS-9-2106016-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/527b/9404391/5da05e17e66e/ADVS-9-2106016-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/527b/9404391/53a96bab9778/ADVS-9-2106016-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/527b/9404391/1c16f2bb1585/ADVS-9-2106016-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/527b/9404391/c80fc779ba94/ADVS-9-2106016-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/527b/9404391/ee5f4acdbf1b/ADVS-9-2106016-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/527b/9404391/5da05e17e66e/ADVS-9-2106016-g003.jpg

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