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利用自旋轨道泄漏进行拓扑非平凡材料的高通量发现

High-throughput Discovery of Topologically Non-trivial Materials using Spin-orbit Spillage.

作者信息

Choudhary Kamal, Garrity Kevin F, Tavazza Francesca

机构信息

Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland, 20899, USA.

出版信息

Sci Rep. 2019 Jun 12;9(1):8534. doi: 10.1038/s41598-019-45028-y.

Abstract

We present a novel methodology to identify topologically non-trivial materials based on band inversion induced by spin-orbit coupling (SOC) effect. Specifically, we compare the density functional theory (DFT) based wavefunctions with and without spin-orbit coupling and compute the 'spin-orbit-spillage' as a measure of band-inversion. Due to its ease of calculation, without any need for symmetry analysis or dense k-point interpolation, the spillage is an excellent tool for identifying topologically non-trivial materials. Out of 30000 materials available in the JARVIS-DFT database, we applied this methodology to more than 4835 non-magnetic materials consisting of heavy atoms and low bandgaps. We found 1868 candidate materials with high-spillage (using 0.5 as a threshold). We validated our methodology by carrying out conventional Wannier-interpolation calculations for 289 candidate materials. We demonstrate that in addition to Z topological insulators, this screening method successfully identified many semimetals and topological crystalline insulators. Importantly, our approach is applicable to the investigation of disordered or distorted as well as magnetic materials, because it is not based on symmetry considerations. We discuss some individual example materials, as well as trends throughout our dataset, which is available at the websites: https://www.ctcms.nist.gov/~knc6/JVASP.html and https://jarvis.nist.gov/ .

摘要

我们提出了一种基于自旋轨道耦合(SOC)效应引起的能带反转来识别拓扑非平凡材料的新方法。具体而言,我们比较了有无自旋轨道耦合时基于密度泛函理论(DFT)的波函数,并计算“自旋轨道溢出”作为能带反转的一种度量。由于其计算简便,无需任何对称性分析或密集的k点插值,溢出是识别拓扑非平凡材料的一种出色工具。在JARVIS-DFT数据库中可用的30000种材料中,我们将此方法应用于4835多种由重原子和低带隙组成的非磁性材料。我们发现了1868种具有高溢出的候选材料(使用0.5作为阈值)。我们通过对289种候选材料进行传统的万尼尔插值计算来验证我们的方法。我们证明,除了Z拓扑绝缘体之外,这种筛选方法还成功识别了许多半金属和拓扑晶体绝缘体。重要的是,我们的方法适用于对无序或扭曲以及磁性材料的研究,因为它不基于对称性考虑。我们讨论了一些个别示例材料以及整个数据集的趋势,这些可在网站https://www.ctcms.nist.gov/~knc6/JVASP.html和https://jarvis.nist.gov/上获取。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d541/6561936/f95c0f5f3b3f/41598_2019_45028_Fig1_HTML.jpg

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