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使用弹性粘合剂通过接触压力实现电子元件安装的电阻变化机制

Resistance Change Mechanism of Electronic Component Mounting through Contact Pressure Using Elastic Adhesive.

作者信息

Sato Takashi, Koshi Tomoya, Iwase Eiji

机构信息

Department of Applied Mechanics, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan.

Sensing System Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8565, Japan.

出版信息

Micromachines (Basel). 2019 Jun 14;10(6):396. doi: 10.3390/mi10060396.

Abstract

For mounting electronic components through contact pressure using elastic adhesives, a high contact resistance is an inevitable issue in achieving solderless wiring in a low-temperature and low-cost process. To decrease the contact resistance, we investigated the resistance change mechanism by measuring the contact resistance with various contact pressures and copper layer thicknesses. The contact resistivity decreased to 4.2 × 10 Ω·m as the contact pressure increased to 800 kPa and the copper layer thickness decreased to 5 µm. In addition, we measured the change in the total resistance with various copper layer thicknesses, including the contact and wiring resistance, and obtained the minimum combined resistance of 123 mΩ with a copper-layer thickness of 30 µm using our mounting method. In this measurement, a low contact resistance was obtained with a 5-µm-thick copper layer and a contact pressure of 200 kPa or more; however, there is a trade-off with respect to the copper layer thickness in obtaining the minimum combined resistance because of the increasing wiring resistance. Subsequently, based on these measurements, we developed a sandwich structure to decrease the contact resistance, and a contact resistivity of 8.0 × 10 Ω·m was obtained with the proposed structure.

摘要

对于使用弹性粘合剂通过接触压力来安装电子元件而言,在低温低成本工艺中实现无焊布线时,高接触电阻是一个不可避免的问题。为了降低接触电阻,我们通过测量不同接触压力和铜层厚度下的接触电阻来研究电阻变化机制。当接触压力增加到800 kPa且铜层厚度减小到5 µm时,接触电阻率降至4.2×10Ω·m。此外,我们测量了包括接触电阻和布线电阻在内的不同铜层厚度下的总电阻变化,并使用我们的安装方法在铜层厚度为30 µm时获得了123 mΩ的最小组合电阻。在该测量中,当铜层厚度为5 µm且接触压力为200 kPa或更高时可获得低接触电阻;然而,由于布线电阻增加,在获得最小组合电阻方面,铜层厚度存在权衡。随后,基于这些测量结果,我们开发了一种用于降低接触电阻的三明治结构,采用该结构可获得8.0×10Ω·m的接触电阻率。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3f6f/6631103/817ef00134d6/micromachines-10-00396-g001.jpg

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