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在体硅衬底上具有锗量子点的硅锗纳米盘阵列,展示了与双耦合相关的独特光与物质相互作用。

An array of SiGe nanodisks with Ge quantum dots on bulk Si substrates demonstrating a unique light-matter interaction associated with dual coupling.

作者信息

Zhang Ningning, Wang Shuguang, Chen Peizong, Zhang Lijian, Peng Kun, Jiang Zuimin, Zhong Zhenyang

机构信息

State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, People's Republic of China.

出版信息

Nanoscale. 2019 Sep 7;11(33):15487-15496. doi: 10.1039/c9nr00798a. Epub 2019 Jun 18.

Abstract

Si-Based microdisks with Ge quantum dots (QDs) have been of great interest due to their potential as the desired light source for monolithic optical-electronic integrated circuits (MOEICs), as well as in the studies of cavity quantum electrodynamics (CQED). Here, we report on unique SiGe nanodisk arrays with embedded Ge QDs directly realized on bulk Si substrates. Their superior optoelectronic properties are demonstrated by remarkably enhanced photoluminescence due to the coupling between QD emissions and cavity modes of the nanodisk, even though the size of the nanodisk is much smaller than the wavelengths of cavity modes. Moreover, spectral shifts of cavity modes and an intensity modulation related to the interference of in-phase emissions from QDs in the nanodisk array are observed due to alternative coupling between nanodisks. A hybridized mode, originating from the spectral overlap between the anapole mode of individual nanodisks and the guided mode of periodic nanodisks, results in strong luminescence even at room temperature. Our results shed new light on the fundamental physics of CQED in nanodisk arrays with embedded QDs. Given their superior optoelectronic properties, the feasibility of carrier injection and thermal dissipation through the Si pedestal, the presented SiGe nanodisks with embedded Ge QDs will have great potential for application in innovative optoelectronic devices, particularly as the light source for MOEICs.

摘要

具有锗量子点(QDs)的硅基微盘因其作为单片光电子集成电路(MOEICs)所需光源的潜力以及在腔量子电动力学(CQED)研究中的应用而备受关注。在此,我们报道了直接在块状硅衬底上实现的具有嵌入式锗量子点的独特硅锗纳米盘阵列。尽管纳米盘的尺寸远小于腔模波长,但由于量子点发射与纳米盘腔模之间的耦合,其光致发光显著增强,从而证明了它们优异的光电性能。此外,由于纳米盘之间的交替耦合,观察到了腔模的光谱位移以及与纳米盘阵列中量子点同相发射干涉相关的强度调制。一种混合模式源于单个纳米盘的无偶极模式与周期性纳米盘的导模之间的光谱重叠,即使在室温下也能产生强烈的发光。我们的结果为具有嵌入式量子点的纳米盘阵列中CQED的基本物理原理提供了新的见解。鉴于其优异的光电性能、通过硅基座进行载流子注入和热耗散的可行性,所展示的具有嵌入式锗量子点的硅锗纳米盘在创新光电器件中,特别是作为MOEICs的光源,将具有巨大的应用潜力。

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