Wang Shuguang, Zhang Ningning, Chen Peizong, Wang Liming, Yang Xinju, Jiang Zuimin, Zhong Zhenyang
State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, People's Republic of China. Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, People's Republic of China.
Nanotechnology. 2018 Aug 24;29(34):345606. doi: 10.1088/1361-6528/aac9f6. Epub 2018 Jun 4.
A feasible route is developed toward precise site-controlling of quantum dots (QDs) at the microdisk periphery, where most microdisk cavity modes are located. The preferential growth of self-assembled Ge QDs at the periphery of Si microdisks is discovered. Moreover, both the height and linear density of Ge QDs can be controlled by tuning the amount of deposited Ge and the microdisk size. The inherent mechanisms of these unique features are discussed, taking into account both the growth kinetics and thermodynamics. By growing Ge on the innovative Si microdisks with small protrusions at the disk periphery, the positioning of Ge QDs at the periphery can be exactly predetermined. Such a precise site-controlling of Ge QDs at the periphery enables the location of the QD right at the field antinodes of the cavity mode of the Si microdisk, thereby achieving spatial matching between QD and cavity mode. These results open a promising door to realize the semiconductor QD-microdisk systems with both spectral and spatial matching between QDs and microdisk cavity modes, which will be the promising candidates for exploring the fundamental features of cavity quantum electrodynamics and the innovative optoelectronic devices based on strong light-matter interaction.
开发了一条可行的路线，用于在微盘边缘精确控制量子点（QD）的位置，大多数微盘腔模都位于该边缘。发现了自组装锗量子点在硅微盘边缘的优先生长现象。此外，通过调整锗的沉积量和微盘尺寸，可以控制锗量子点的高度和线密度。考虑到生长动力学和热力学，讨论了这些独特特性的内在机制。通过在盘边缘具有小突起的创新型硅微盘上生长锗，可以精确地预先确定锗量子点在边缘的位置。在边缘对锗量子点进行如此精确的位置控制，能够使量子点恰好位于硅微盘腔模的场波腹处，从而实现量子点与腔模之间的空间匹配。这些结果为实现量子点与微盘腔模之间具有光谱和空间匹配的半导体量子点 - 微盘系统打开了一扇充满希望的大门，这将是探索腔量子电动力学基本特性以及基于强光 - 物质相互作用的创新光电器件的有前途的候选者。
