Zhang Jingyan, Peng Wenlin, Yu Guanghua, He Zhanbing, Yang Feng, Ji Wei, Hu Chen, Wang Shouguo
Department of Physics , Renmin University of China , Beijing 100872 , China.
Department of Physics , McGill University , Montreal H3A2T8 , Canada.
ACS Appl Mater Interfaces. 2019 Jul 10;11(27):24751-24756. doi: 10.1021/acsami.9b06204. Epub 2019 Jun 27.
A spintronic device based on the spin-dependent Hall effect has attracted great interest because of its great potential applications in the multivalue storage and logic gate, which is a promising candidate to break the bottleneck of the information industry in the big data period. It is a technological challenge to implant spintronic devices into semiconductor integrated circuits. The anomalous Hall angle (θ), defined as the deviation of the electron flow from the current direction, is the key parameter to evaluate the capacity of Hall device compatibility. However, the bottleneck for the device is low θ (less than 5%) at room temperature (RT), making it difficult to directly complement with the semiconductor circuit which limits its potential application. Here, we report a simple perpendicular multilayered structure with θ up to 5.1% at RT. Wide working temperature (250-350 K) across RT for our samples will accelerate the potential applications in spintronic memory. A giant Hall angle at RT originates from the enhanced side-jump scattering at the atomic-scale-modified interfacial structure. The high θ at RT together with wide working temperature is practically significant and may provide the way for further 3D spintronic devices based on the spin-dependent Hall effect with ultrahigh storage density and ultralow power consumption.
基于自旋相关霍尔效应的自旋电子器件因其在多值存储和逻辑门方面的巨大潜在应用而备受关注，有望成为打破大数据时代信息产业瓶颈的候选者。将自旋电子器件植入半导体集成电路是一项技术挑战。反常霍尔角（θ）定义为电子流与电流方向的偏差，是评估霍尔器件兼容性的关键参数。然而，该器件的瓶颈在于室温下θ值较低（小于5%），这使得它难以直接与半导体电路互补，限制了其潜在应用。在此，我们报道了一种简单的垂直多层结构，在室温下θ值高达5.1%。我们的样品在室温下具有较宽的工作温度范围（250 - 350 K），这将加速自旋电子存储器的潜在应用。室温下的大霍尔角源于原子尺度改性界面结构处增强的侧向跳跃散射。室温下的高θ值以及较宽的工作温度具有实际意义，可能为基于自旋相关霍尔效应的具有超高存储密度和超低功耗的进一步三维自旋电子器件提供途径。
