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使用三步旋涂CHNHPbBr发光体和PEDOT:PSS/MoO-氨复合空穴传输层提高钙钛矿发光二极管的效率。

Improved Efficiency of Perovskite Light-Emitting Diodes Using a Three-Step Spin-Coated CHNHPbBr Emitter and a PEDOT:PSS/MoO-Ammonia Composite Hole Transport Layer.

作者信息

Zhou Yuanming, Mei Sijiong, Sun Dongwei, Liu Neng, Shi Wuxing, Feng Jiahuan, Mei Fei, Xu Jinxia, Jiang Yan, Cao Xianan

机构信息

Hubei Key Laboratory for High-efficiency Use of Solar Energy and Operation Control of Energy Storage System, Hubei University of Technology, Wuhan 430068, China.

Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA.

出版信息

Micromachines (Basel). 2019 Jul 7;10(7):459. doi: 10.3390/mi10070459.

Abstract

High efficiency perovskite light-emitting diodes (PeLEDs) using PEDOT:PSS/MoO-ammonia composite hole transport layers (HTLs) with different MoO-ammonia ratios were prepared and characterized. For PeLEDs with one-step spin-coated CHNHPbBr emitter, an optimal MoO-ammonia volume ratio (0.02) in PEDOT:PSS/MoO-ammonia composite HTL presented a maximum luminance of 1082 cd/m and maximum current efficiency of 0.7 cd/A, which are 82% and 94% higher than those of the control device using pure PEDOT:PSS HTL respectively. It can be explained by that the optimized amount of MoO-ammonia in the composite HTLs cannot only facilitate hole injection into CHNHPbBr through reducing the contact barrier, but also suppress the exciton quenching at the HTL/CHNHPbBr interface. Three-step spin coating method was further used to obtain uniform and dense CHNHPbBr films, which lead to a maximum luminance of 5044 cd/m and maximum current efficiency of 3.12 cd/A, showing enhancement of 750% and 767% compared with the control device respectively. The significantly improved efficiency of PeLEDs using three-step spin-coated CHNHPbBr film and an optimum PEDOT:PSS/MoO-ammonia composite HTL can be explained by the enhanced carrier recombination through better hole injection and film morphology optimization, as well as the reduced exciton quenching at HTL/CHNHPbBr interface. These results present a promising strategy for the device engineering of high efficiency PeLEDs.

摘要

制备并表征了使用具有不同MoO - 氨比例的PEDOT:PSS/MoO - 氨复合空穴传输层(HTL)的高效钙钛矿发光二极管(PeLED)。对于采用一步旋涂CH₃NH₃PbBr发射体的PeLED,PEDOT:PSS/MoO - 氨复合HTL中最佳的MoO - 氨体积比(0.02)呈现出最大亮度1082 cd/m²和最大电流效率0.7 cd/A,分别比使用纯PEDOT:PSS HTL的对照器件高82%和94%。这可以解释为复合HTL中优化量的MoO - 氨不仅通过降低接触势垒促进空穴注入到CH₃NH₃PbBr中,还抑制了HTL/CH₃NH₃PbBr界面处的激子猝灭。进一步采用三步旋涂法获得均匀致密的CH₃NH₃PbBr薄膜,则导致最大亮度为5044 cd/m²和最大电流效率为3.12 cd/A,分别比对照器件提高了750%和767%。使用三步旋涂CH₃NH₃PbBr薄膜和最佳PEDOT:PSS/MoO - 氨复合HTL的PeLED效率显著提高,可以通过更好的空穴注入和薄膜形态优化增强载流子复合,以及减少HTL/CH₃NH₃PbBr界面处的激子猝灭来解释。这些结果为高效PeLED的器件工程提供了一种有前景的策略。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/171a/6680406/0ac14348f758/micromachines-10-00459-g001.jpg

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