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通过顺序气相沉积制备超高响应率和探测率的石墨烯-钙钛矿杂化光电晶体管。

Ultrahigh Responsivity and Detectivity Graphene-Perovskite Hybrid Phototransistors by Sequential Vapor Deposition.

机构信息

Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, 106, Taiwan (R.O.C.).

Center for Condensed Matter Sciences, National Taiwan University, Taipei, 10617, Taiwan (R.O.C.).

出版信息

Sci Rep. 2017 Apr 19;7:46281. doi: 10.1038/srep46281.

Abstract

In this work, graphene-methylammonium lead iodide (MAPbI) perovskite hybrid phototransistors fabricated by sequential vapor deposition are demonstrated. Ultrahigh responsivity of 1.73 × 10 A W and detectivity of 2 × 10 Jones are achieved, with extremely high effective quantum efficiencies of about 10% in the visible range (450-700 nm). This excellent performance is attributed to the ultra-flat perovskite films grown by vapor deposition on the graphene sheets. The hybrid structure of graphene covered with uniform perovskite has high exciton separation ability under light exposure, and thus efficiently generates photocurrents. This paper presents photoluminescence (PL) images along with statistical analysis used to study the photo-induced exciton behavior. Both uniform and dramatic PL intensity quenching has been observed over entire measured regions, consistently demonstrating excellent exciton separation in the devices.

摘要

在这项工作中,通过顺序气相沉积制备了石墨烯-甲脒碘化铅(MAPbI)钙钛矿杂化光电晶体管。实现了超高的响应率 1.73×10^-3 A W 和探测率 2×10^12 Jones,在可见光范围内(450-700nm)具有约 10%的极高有效量子效率。这种优异的性能归因于气相沉积在石墨烯片上生长的超平整钙钛矿薄膜。在光照射下,覆盖有均匀钙钛矿的杂化结构具有高激子分离能力,从而有效地产生光电流。本文通过光致发光(PL)图像和统计分析来研究光致激子行为。在整个测量区域都观察到了均匀且显著的 PL 强度猝灭,一致地证明了器件中优异的激子分离。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/40f5/5395820/e331ba783844/srep46281-f1.jpg

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