Sohn Byoung-Uk, Choi Ju Won, Ng Doris K T, Tan Dawn T H
Photonics Devices and System Group, Engineering Product Development, Singapore University of Technology and Design, 487372, Singapore, Singapore.
Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-02, Innovis Tower, 138634, Singapore, Singapore.
Sci Rep. 2019 Jul 17;9(1):10364. doi: 10.1038/s41598-019-46865-7.
The dispersive nonlinear refractive index of ultra-silicon-rich nitride, and its two-photon and three-photon absorption coefficients are measured in the wavelength range between 0.8 µm-1.6 µm, covering the O- to L - telecommunications bands. In the two-photon absorption range, the measured nonlinear coefficients are compared to theoretically calculated values with a simple parabolic band structure. Two-photon absorption is observed to exist only at wavelengths lower than 1.2 μm. The criterion for all-optical switching through the material is investigated and it is shown that ultra-silicon-rich nitride is a good material in the three-photon absorption region, which spans the entire O- to L- telecommunications bands.
在0.8微米至1.6微米的波长范围内测量了富硅氮化物的色散非线性折射率及其双光子和三光子吸收系数，该范围覆盖了从O波段到L波段的电信频段。在双光子吸收范围内，将测量得到的非线性系数与具有简单抛物线能带结构的理论计算值进行了比较。观察到双光子吸收仅在波长低于1.2微米时存在。研究了通过该材料进行全光开关的判据，结果表明富硅氮化物在跨越整个O波段到L波段电信频段的三光子吸收区域是一种优良材料。
