Ban Chaoyi, Wang Xiangjing, Zhou Zhe, Mao Huiwu, Cheng Shuai, Zhang Zepu, Liu Zhengdong, Li Hai, Liu Juqing, Huang Wei
Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an, 710072, China.
Sci Rep. 2019 Jul 17;9(1):10337. doi: 10.1038/s41598-019-46884-4.
Building stretchable memory is an effective strategy for developing next-generation memory technologies toward stretchable and wearable electronics. Here we demonstrate a universal strategy for the fabrication of high performance stretchable polymer memory via tailoring surface morphology, in which common conjugated polymers and sharp reduced graphene oxide (r-rGO) films are used as active memristive layers and conductive electrodes, respectively. The fabricated devices feature write-once-read-many-times (WORM) memory, with a low switching voltage of 1.1 V, high ON/OFF current ratio of 10, and an ideal long retention time over 12000 s. Sharp surface-induced resistive switching behavior has been proposed to explore the electrical transition. Moreover, the polymer memory show reliable electrical bistable properties with a stretchability up to 30%, demonstrating their great potential candidates as high performance stretchable memory in soft electronics.
构建可拉伸存储器是开发面向可拉伸和可穿戴电子设备的下一代存储技术的有效策略。在此，我们展示了一种通过调整表面形态来制造高性能可拉伸聚合物存储器的通用策略，其中普通共轭聚合物和尖锐还原氧化石墨烯（r-rGO）薄膜分别用作有源忆阻层和导电电极。所制备的器件具有一次写入多次读取（WORM）存储器的特性，开关电压低至1.1 V，开/关电流比高达10，理想的长保持时间超过12000 s。已提出尖锐表面诱导的电阻开关行为来探索电转变。此外，聚合物存储器表现出可靠的电双稳特性，拉伸性高达30%，证明它们作为软电子学中高性能可拉伸存储器具有巨大潜力。
