入射光倾斜度对硅太阳能电池性能的影响。

Effect of obliquity of incident light on the performance of silicon solar cells.

作者信息

Sharma R

机构信息

Department of Engg. Physics, Model Institute of Engg. & Technology (MIET), Jammu, India.

出版信息

Heliyon. 2019 Jul 2;5(7):e01965. doi: 10.1016/j.heliyon.2019.e01965. eCollection 2019 Jul.

DOI:10.1016/j.heliyon.2019.e01965

PMID:31317080

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6611928/

Abstract

The aim of this work is to investigate the effect of angle of incident light on the performance of silicon solar cell. In this regard, numerical calculations have been performed to obtain the reflectance for double layer antireflection coating (DLARC) of SiN at various angles of incidence (i.e. ) using transfer matrix method. Reflectances obtained, are found to increases with increase in angle of incidence. Calculated reflectances have been further used in the PC1D simulator as external reflectance files to study the performance of silicon solar cell. As a result of the simulation, the conversion efficiency (and short circuit current) of solar cell is found to decrease by 1.7% (0.062 mA/cm) with increase in angle of incidence from .

摘要

这项工作的目的是研究入射光角度对硅太阳能电池性能的影响。在这方面，已使用转移矩阵法进行了数值计算，以获得氮化硅双层减反射涂层（DLARC）在不同入射角（即）下的反射率。所获得的反射率被发现随着入射角的增加而增加。计算得到的反射率已进一步作为外部反射率文件用于PC1D模拟器中，以研究硅太阳能电池的性能。模拟结果表明，随着入射角从增加，太阳能电池的转换效率（和短路电流）降低了1.7%（0.062 mA/cm）。