Zhou Guangdong, Sun Bai, Ren Zhijun, Wang Lidan, Xu Cunyun, Wu Bo, Li Ping, Yao Yanqing, Duan Shukai
School of Science, Guizhou institute of Technology, Guiyang 55003, China.
Chem Commun (Camb). 2019 Aug 15;55(67):9915-9918. doi: 10.1039/c9cc04069b.
A device with the lateral structure of Ag|MnOx|Ag was developed using a single MnOx nanorod. The device showed a typical resistor property under dry ambience, while it demonstrated the reversion between resistor and memristor under moisture ambience. Memory logic functions including logic gates and displays were feasible under the dual input of electric and moisture signals.
利用单个MnOₓ纳米棒开发了一种具有Ag|MnOₓ|Ag横向结构的器件。该器件在干燥环境下表现出典型的电阻特性，而在潮湿环境下则表现出电阻器与忆阻器之间的转变。在电信号和湿度信号的双重输入下，包括逻辑门和显示器在内的存储逻辑功能是可行的。
