State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology , Sun Yat-Sen University , Guangzhou , Guangdong 510275 , China.
Department of Electronic Communication and Technology , Shenzhen Institute of Information Technology , Shenzhen , Guangdong 518172 , China.
ACS Appl Mater Interfaces. 2018 Jul 25;10(29):24598-24606. doi: 10.1021/acsami.8b05749. Epub 2018 Jul 11.
In this study, a NiO-based resistive memristor was manufactured using a solution combustion method. In this device, both analog and digital bipolar resistive switching were observed. They are dependent on the stressed bias voltage. Prior to the electroforming, the analog bipolar resistive switching was realized through the change of the Schottky barrier at p-type NiO/Ag junction by the local migration of the oxygen ion in the interface. On the basis of the analog resistive switching, several synaptic functions were demonstrated, such as nonlinear transmission characteristics, spike-rate-dependent plasticity, long-term/short-term memory, and "learning-experience" behavior. In addition, once the electroforming operation was carried out using a high applied voltage, the resistive switching was changed from analog to digital. The formation and rupture of the oxygen vacancy filaments is dominant. This novel memristor with the multifunction of analog and digital resistive switching is expected to decrease the manufacturing complexity of the electrocircuits containing analog/digital memristors.
在这项研究中，使用溶液燃烧法制造了一种基于 NiO 的电阻式忆阻器。在该器件中，观察到了模拟和数字双极性电阻开关。它们依赖于所施加的偏置电压。在电形成之前，通过界面处氧离子的局部迁移，改变 p 型 NiO/Ag 结处的肖特基势垒，实现了模拟双极性电阻开关。在此基础上，演示了几种突触功能，如非线性传输特性、脉冲率依赖性可塑性、长时/短时记忆和“学习-经验”行为。此外，一旦使用高施加电压进行电形成操作，电阻开关就会从模拟变为数字。氧空位丝的形成和断裂占主导地位。这种具有模拟和数字电阻开关多功能的新型忆阻器有望降低包含模拟/数字忆阻器的电子电路的制造复杂性。
