Fang Limei, Liang Weizheng, Feng Qingguo, Luo Sheng-Nian
Key Laboratory of Advanced Technologies of Materials, Ministry of Education, and Institute of Materials Dynamics, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China.
J Phys Condens Matter. 2019 Nov 13;31(45):455001. doi: 10.1088/1361-648X/ab34bc. Epub 2019 Jul 25.
PtSe is an emerging layered two-dimensional material of applied interest. Its monolayer shows promising properties for applications in electronic devices, while the bandgap of a multilayer PtSe film can be tuned via changing its thickness. In this work the bilayer PtSe thin films are investigated as an example of structural engineering with first-principles calculations. Various van der Waals corrections schemes are firstly discussed, and the optB86b scheme shows a better description of the semiconductor-metal transition for PtSe films. Six bilayer PtSe thin films in different stacking modes are constructed in order to structurally tune the electronic and transport properties. The bandgap can be effectively broadened with the structural engineering for wider potential applications. The carrier mobility, dynamical stability and Raman spectra are also calculated and discussed.
PtSe是一种具有应用价值的新兴层状二维材料。其单层在电子器件应用中展现出有前景的特性,而多层PtSe薄膜的带隙可通过改变其厚度来调节。在这项工作中,以双层PtSe薄膜为例,采用第一性原理计算对其进行结构工程研究。首先讨论了各种范德华修正方案,optB86b方案对PtSe薄膜的半导体-金属转变有更好的描述。构建了六种不同堆叠模式的双层PtSe薄膜,以从结构上调节其电子和输运性质。通过结构工程可有效拓宽带隙,以实现更广泛的潜在应用。还计算并讨论了载流子迁移率、动力学稳定性和拉曼光谱。