使用SiC上的3C-SiC籽晶堆叠体进行块状(100) 3C-SiC气相生长过程中的限制因素。

Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks.

作者信息

Schuh Philipp, Steiner Johannes, La Via Francesco, Mauceri Marco, Zielinski Marcin, Wellmann Peter J

机构信息

Crystal Growth Lab, Materials Department 6 (i-meet), FAU Erlangen-Nuremberg, Martensstr. 7, D-91058 Erlangen, Germany.

CNR-IMM, sezione di Catania, Stradale Primosole 50, I-95121 Catania, Italy.

出版信息

Materials (Basel). 2019 Jul 24;12(15):2353. doi: 10.3390/ma12152353.

DOI:10.3390/ma12152353

PMID:31344899

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6696193/

Abstract

The growth of 3C-SiC shows technological challenges, such as high supersaturation, a silicon-rich gas phase and a high vertical temperature gradient. We have developed a transfer method creating high-quality 3C-SiC-on-SiC (100) seeding stacks, suitable for use in sublimation "sandwich" epitaxy (SE). This work presents simulation data on the change of supersaturation and the temperature gradient between source and seed for the bulk growth. A series of growth runs on increased source to seed distances was characterized by XRD and Raman spectroscopy. Results show a decrease in quality in terms of single-crystallinity with a decrease in supersaturation. Morphology analysis of as-grown material indicates an increasing protrusion dimension with increasing thickness. This effect limits the achievable maximal thickness. Additional polytype inclusions were observed, which began to occur with low supersaturation (S ≤ 0.06) and prolonged growth (increase of carbon gas-species).

摘要

3C-SiC的生长面临着诸多技术挑战，例如高过饱和度、富硅气相以及高垂直温度梯度。我们开发了一种转移方法，可制备出适用于升华“三明治”外延（SE）的高质量SiC(100)基3C-SiC籽晶堆叠结构。本文给出了体生长过程中过饱和度变化以及源区与籽晶之间温度梯度的模拟数据。通过增加源区与籽晶之间的距离进行了一系列生长实验，并利用X射线衍射（XRD）和拉曼光谱对其进行了表征。结果表明，随着过饱和度的降低，单晶质量下降。对生长后的材料进行形貌分析表明，随着厚度增加，突出尺寸增大。这种效应限制了可达到的最大厚度。还观察到了额外的多型体夹杂，它们在低过饱和度（S≤0.06）和长时间生长（碳气态物种增加）时开始出现。