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立方碳化硅生长的新方法与新认识

New Approaches and Understandings in the Growth of Cubic Silicon Carbide.

作者信息

La Via Francesco, Zimbone Massimo, Bongiorno Corrado, La Magna Antonino, Fisicaro Giuseppe, Deretzis Ioannis, Scuderi Viviana, Calabretta Cristiano, Giannazzo Filippo, Zielinski Marcin, Anzalone Ruggero, Mauceri Marco, Crippa Danilo, Scalise Emilio, Marzegalli Anna, Sarikov Andrey, Miglio Leo, Jokubavicius Valdas, Syväjärvi Mikael, Yakimova Rositsa, Schuh Philipp, Schöler Michael, Kollmuss Manuel, Wellmann Peter

机构信息

Consiglio Nazionale delle Ricerche - Istituto per la Microelettronice e Microsistemi, Strada VIII 5, 95121 Catania, Italy.

NOVASIC, Savoie Technolac-Arche Bat.4, Allée du Lac d'Aiguebelette, BP 267, 73375 Le Bourget du Lac CEDEX, France.

出版信息

Materials (Basel). 2021 Sep 16;14(18):5348. doi: 10.3390/ma14185348.

DOI:10.3390/ma14185348
PMID:34576572
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8465050/
Abstract

In this review paper, several new approaches about the 3C-SiC growth are been presented. In fact, despite the long research activity on 3C-SiC, no devices with good electrical characteristics have been obtained due to the high defect density and high level of stress. To overcome these problems, two different approaches have been used in the last years. From one side, several compliance substrates have been used to try to reduce both the defects and stress, while from another side, the first bulk growth has been performed to try to improve the quality of this material with respect to the heteroepitaxial one. From all these studies, a new understanding of the material defects has been obtained, as well as regarding all the interactions between defects and several growth parameters. This new knowledge will be the basis to solve the main issue of the 3C-SiC growth and reach the goal to obtain a material with low defects and low stress that would allow for realizing devices with extremely interesting characteristics.

摘要

在这篇综述论文中，介绍了几种关于3C-SiC生长的新方法。事实上，尽管对3C-SiC进行了长期的研究，但由于高缺陷密度和高应力水平，尚未获得具有良好电学特性的器件。为了克服这些问题，在过去几年中采用了两种不同的方法。一方面，使用了几种顺应性衬底来试图减少缺陷和应力，而另一方面，进行了首次体生长以试图相对于异质外延生长提高这种材料的质量。从所有这些研究中，对材料缺陷以及缺陷与几个生长参数之间的所有相互作用有了新的认识。这一新知识将成为解决3C-SiC生长主要问题的基础，并实现获得具有低缺陷和低应力的材料这一目标，从而能够制造出具有极其有趣特性的器件。

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