Chen Xifan, Zhu Yuanzhi, Zhang Miao, Sui Jinyi, Peng Wenchao, Li Yang, Zhang GuoLiang, Zhang Fengbao, Fan Xiaobin
School of School of Chemical Engineering and Technology , Tianjin University , Tianjin 300072 , China.
Faculty of Chemical Engineering , Kunming University of Science and Technology , Kunming 650500 , China.
ACS Nano. 2019 Aug 27;13(8):9449-9456. doi: 10.1021/acsnano.9b04301. Epub 2019 Aug 5.
MXenes, a family of two-dimensional (2D) transition-metal carbide and nitride materials, are supposed to be promising pseudocapacitive materials because of their high electronic conductivity and hydrophilic surfaces. MXenes, prepared by removing the "A" elements of their corresponding MAX phases by hydrofluoric acid (HF) or LiF-HCl etching, possess abundant terminal groups like -F, -OH, and -O groups. It has been proven that the MXenes with fewer -F terminal groups and more -O groups showed a higher pseudocapacitor performance. In organic reactions, -OH and -X (X = halogen) groups could turn to ether groups in strong nucleophilic reagent. Inspired by that, herein, we report an -butyllithium-treated method to turn the -F and -OH terminal groups to -O groups on the TiCT MXenes. Two types of TiCT MXenes prepared by either HF or LiF-HCl etching were systematically investigated, and a comparison with the traditional KOH/NaOH/LiOH-treated method was also carried out. It is found that most of the -F terminal groups on the TiCT MXenes can be successfully removed by -butyllithium, and abundant -O terminal groups were formed. The -butyllithium-treated TiCT MXenes show promising applications in high-performance pseudocapacitors. A record high capacitance of 523 F g at 2 mV s was obtained for the -butyllithium-treated TiCT MXenes, and 96% capacity can remain even after 10 000 cycles.
MXenes是一类二维(2D)过渡金属碳化物和氮化物材料,因其高电子导电性和亲水表面而被认为是很有前景的赝电容材料。通过氢氟酸(HF)或LiF-HCl蚀刻去除其相应MAX相中的“A”元素制备的MXenes,具有丰富的端基,如-F、-OH和-O基团。已证明具有较少-F端基和较多-O基团的MXenes表现出更高的赝电容性能。在有机反应中,-OH和-X(X = 卤素)基团在强亲核试剂中可转变为醚基。受此启发,在此我们报道一种用丁基锂处理的方法,将TiCT MXenes上的-F和-OH端基转变为-O基团。系统研究了通过HF或LiF-HCl蚀刻制备的两种类型的TiCT MXenes,并与传统的KOH/NaOH/LiOH处理方法进行了比较。发现丁基锂可成功去除TiCT MXenes上的大部分-F端基,并形成大量-O端基。经丁基锂处理的TiCT MXenes在高性能赝电容中显示出有前景的应用。经丁基锂处理的TiCT MXenes在2 mV s时获得了创纪录的523 F g的高电容,即使在10000次循环后仍可保持96%的容量。