Lee Han Sol, Park Sam, Lim June Yeong, Yu Sanghyuck, Ahn Jongtae, Hwang Do Kyung, Sim Yumin, Lee Je-Ho, Seong Maeng-Je, Oh Sehoon, Choi Hyoung Joon, Im Seongil
Department of Physics and Applied Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Korea.
Center for Opto-Electronic Materials and Devices Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Hwarangno 14-gil 5, Seongbuk-gu, Seoul, 02792, Korea.
Small. 2019 Sep;15(38):e1901793. doi: 10.1002/smll.201901793. Epub 2019 Aug 4.
Band-like transport behavior of H-doped transition metal dichalcogenide (TMD) channels in field effect transistors (FET) is studied by conducting low-temperature electrical measurements, where MoTe , WSe , and MoS are chosen for channels. Doped with H atoms through atomic layer deposition, those channels show strong n-type conduction and their mobility increases without losing on-state current as the measurement temperature decreases. In contrast, the mobility of unintentionally (naturally) doped TMD FETs always drops at low temperatures whether they are p- or n-type. Density functional theory calculations show that H-doped MoTe , WSe , and MoS have Fermi levels above conduction band edge. It is thus concluded that the charge transport behavior in H-doped TMD channels is metallic showing band-like transport rather than thermal hopping. These results indicate that H-doped TMD FETs are practically useful even at low-temperature ranges.
通过进行低温电学测量，研究了场效应晶体管（FET）中H掺杂过渡金属二硫属化物（TMD）沟道的带状传输行为，其中选择MoTe₂、WSe₂和MoS₂作为沟道。通过原子层沉积掺杂H原子后，这些沟道呈现出强n型传导，并且随着测量温度降低，其迁移率增加而不会损失导通电流。相比之下，无意（自然）掺杂的TMD FET的迁移率在低温下总是下降，无论它们是p型还是n型。密度泛函理论计算表明，H掺杂的MoTe₂、WSe₂和MoS₂的费米能级高于导带边缘。因此得出结论，H掺杂TMD沟道中的电荷传输行为是金属性的，呈现带状传输而非热跳跃。这些结果表明，即使在低温范围内，H掺杂的TMD FET也具有实际应用价值。
