电迁移过程中 Cu/Ni/Sn-Ag 微凸点的体积收缩诱发的空孔形成机制。

Volume Shrinkage-Induced Voiding Mechanism During Electromigration of Cu/Ni/Sn-Ag Microbump.

机构信息

School of Materials Science and Engineering, Andong National University, Andong-si 36729, Korea.

Amkor Technology Korea Inc., Gwangju 61006, Korea.

出版信息

J Nanosci Nanotechnol. 2020 Jan 1;20(1):278-284. doi: 10.1166/jnn.2020.17246.

DOI:10.1166/jnn.2020.17246

PMID:31383167

Abstract

The effects of annealing, electromigration, and thermomigration on volume shrinkage and voiding mechanisms of Cu/Ni/Sn-2.5Ag microbumps are systematically investigated by using scanning electron microscopy under current stressing of 1.5×10 A/cm² at 150 °C. The resistance increases rapidly in the initial stage due to formation of intermetallic compounds (IMC)s followed by a gradual increase in resistance. Growth of Ni₃Sn₄ IMCs is controlled by a diffusion-dominant mechanism, and voids and volume shrinkage are closely related to IMC phase transformation of (Au, Ni)Sn₄ to Ni₃Sn₄ in microbumps.

摘要

通过在 150°C 下施加 1.5×10 A/cm² 的电流，使用扫描电子显微镜系统地研究了退火、电迁移和热迁移对 Cu/Ni/Sn-2.5Ag 微凸点的体积收缩和空洞形成机制的影响。由于金属间化合物（IMC）的形成，电阻在初始阶段迅速增加，随后电阻逐渐增加。Ni₃Sn₄ IMC 的生长受扩散主导机制控制，空洞和体积收缩与微凸点中（Au，Ni）Sn₄向 Ni₃Sn₄ 的 IMC 相变密切相关。