Kim Seung-Hyun, Park Gyu-Tae, Park Jong-Jin, Park Young-Bae
J Nanosci Nanotechnol. 2015 Nov;15(11):8593-600. doi: 10.1166/jnn.2015.11502.
The effects of annealing, thermomigration (TM), and electromigration (EM) on the intermetallic com- pound (IMC) growth kinetics of Cu/Sn-2.5Ag microbumps were investigated using in-situ scanning electron microscopy at 120-165 degrees C with a current density of 1.5 x 10(5) A/cm2. The IMC growth kinetics was controlled by a diffusion-dominant mechanism and a chemical-reaction-dominant mechanism with annealing and current-stressing conditions, respectively. Before all of the Sn was fully transformed into IMCs, the activation energies of the Cu3Sn IMCs were 0.54 eV, 0.50 eV, and 0.40 eV for annealing, TM, and EM, respectively, which is closely related to the acceleration effect of the interfacial reaction by electron wind force under current stressing. After all of the Sn was fully transformed into IMCs by reacting with Cu, the Cu3Sn IMC growth rates of the three structures became similar due to the reduced and similar diffusion rates inside the IMCs with and without current stressing.
在120-165摄氏度、电流密度为1.5×10⁵A/cm²的条件下，利用原位扫描电子显微镜研究了退火、热迁移（TM）和电迁移（EM）对Cu/Sn-2.5Ag微凸点金属间化合物（IMC）生长动力学的影响。IMC的生长动力学分别由退火和电流应力条件下的扩散主导机制和化学反应主导机制控制。在所有Sn完全转变为IMC之前，Cu₃Sn IMC的激活能对于退火、TM和EM分别为0.54 eV、0.50 eV和0.40 eV，这与电流应力下电子风力对界面反应的加速作用密切相关。在所有Sn通过与Cu反应完全转变为IMC之后，由于有电流应力和无电流应力时IMC内部扩散速率降低且相似，三种结构的Cu₃Sn IMC生长速率变得相似。
