顶栅 -Ga₂O₃ 纳米膜金属 - 半导体场效应晶体管的电学特性
Electrical Properties of Top-Gate -Ga₂O₃ Nanomembrane Metal-Semiconductor Field-Effect Transistor.
作者信息
Ma Jiyeon, Yoo Geonwook
机构信息
School of Electronic Engineering, Soongsil University, Seoul 06938, Korea.
出版信息
J Nanosci Nanotechnol. 2020 Jan 1;20(1):516-519. doi: 10.1166/jnn.2020.17259.
We fabricate top-gate -Ga₂O₃ nanomembrane metal-semiconductor field-effect transistor (MESFET) using a mechanical exfoliation method, and investigate its electrical performance. The Schottky contact between top-gate metal and -Ga₂O₃ (100) channel is evaluated by characterizing properties of Schottky barrier diode, exhibiting an on/off ratio of ~10, an ideality factor of 2.8 and a turn-on voltage of 1.1 V. The proposed top-gate -Ga₂O₃ nanomembrane MESFET exhibits maximum transconductance of ~0.23 mS/mm, field-effect mobility of 1.2 cm²/V·s at = 1 V and subthreshold slope (SS) of 180 mV/dec with high on/off ratio of >10. These results suggest that -Ga₂O₃ nanomembrane MESFET could be a promising component toward -Ga₂O₃-based high power device applications.
我们采用机械剥离法制备了顶栅-Ga₂O₃纳米膜金属-半导体场效应晶体管（MESFET），并研究了其电学性能。通过表征肖特基势垒二极管的特性来评估顶栅金属与-Ga₂O₃（100）沟道之间的肖特基接触，其开/关比约为10，理想因子为2.8，开启电压为1.1 V。所提出的顶栅-Ga₂O₃纳米膜MESFET表现出约0.23 mS/mm的最大跨导、在Vds = 1 V时1.2 cm²/V·s的场效应迁移率以及180 mV/dec的亚阈值斜率（SS），具有大于10的高开/关比。这些结果表明，Ga₂O₃纳米膜MESFET有望成为基于Ga₂O₃的高功率器件应用的一个有前景的组件。
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