Chang Lin, Boes Andreas, Pintus Paolo, Xie Weiqiang, Peters Jon D, Kennedy M J, Jin Warren, Guo Xiao-Wen, Yu Su-Peng, Papp Scott B, Bowers John E
Opt Lett. 2019 Aug 15;44(16):4075-4078. doi: 10.1364/OL.44.004075.
In this Letter, we demonstrate a low loss gallium arsenide and aluminum gallium arsenide on an insulator platform by heterogenous integration. The resonators on this platform exhibit record high quality factors up to 1.5×10, corresponding to a propagation loss ∼0.4 dB/cm. For the first time, to the best of our knowledge, the loss of integrated III-V semiconductor on insulator waveguides becomes comparable with that of the silicon-on-insulator waveguides. This Letter should have a significant impact on photonic integrated circuits (PICs) and become an essential building block for the evolving nonlinear PICs and integrated quantum photonic systems in the future.
在本信函中，我们通过异质集成在绝缘体平台上展示了低损耗的砷化镓和铝镓砷。该平台上的谐振器展现出高达1.5×10的创纪录高品质因数，对应传播损耗约为0.4 dB/cm。据我们所知，集成在绝缘体上的III-V族半导体波导的损耗首次变得与绝缘体上硅波导的损耗相当。本信函应对光子集成电路（PIC）产生重大影响，并成为未来不断发展的非线性PIC和集成量子光子系统的重要组成部分。
