Sarzyński Marcin, Grzanka Ewa, Grzanka Szymon, Targowski Grzegorz, Czernecki Robert, Reszka Anna, Holy Vaclav, Nitta Shugo, Liu Zhibin, Amano Hiroshi, Leszczyński Mike
Institute of High Pressure Physics PAS, Sokołowska 29/37, 01-142 Warsaw, Poland.
TopGaN Ltd., Sokołowska 29/37, 01-142 Warsaw, Poland.
Materials (Basel). 2019 Aug 14;12(16):2583. doi: 10.3390/ma12162583.
InGaN quantum wells were grown using metalorganic chemical vapor phase epitaxy (vertical and horizontal types of reactors) on stripes made on GaN substrate. The stripe width was 5, 10, 20, 50, and 100 µm and their height was 4 and 1 µm. InGaN wells grown on stripes made in the direction perpendicular to the off-cut had a rough morphology and, therefore, this azimuth of stripes was not further explored. InGaN wells grown on the stripes made in the direction parallel to the GaN substrate off-cut had a step-flow-like morphology. For these samples (grown at low temperatures), we found out that the InGaN growth rate was higher for the narrower stripes. The higher growth rate induces a higher indium incorporation and a longer wavelength emission in photoluminescence measurements. This phenomenon is very clear for the 4 µm high stripes and less pronounced for the shallower 1 µm high stripes. The dependence of the emission wavelength on the stripe width paves a way to multicolor emitters.
采用金属有机化学气相外延法（垂直和水平型反应器）在氮化镓衬底上制备的条纹上生长氮化铟镓量子阱。条纹宽度为5、10、20、50和100微米，高度为4和1微米。在垂直于切割面方向制备的条纹上生长的氮化铟镓量子阱具有粗糙的形貌，因此，不再进一步研究这种条纹方位。在平行于氮化镓衬底切割面方向制备的条纹上生长的氮化铟镓量子阱具有台阶流状形貌。对于这些（在低温下生长的）样品，我们发现，条纹越窄，氮化铟镓的生长速率越高。在光致发光测量中，较高的生长速率会导致较高的铟掺入率和较长波长的发射。这种现象在4微米高的条纹中非常明显，而在较浅的1微米高的条纹中则不太明显。发射波长对条纹宽度的依赖性为多色发光体开辟了道路。
