Barile Gianluca, Safari Leila, Ferri Giuseppe, Stornelli Vincenzo
Department of Industrial and Information Engineering and Economics, University of L'Aquila, 67100 L'Aquila, Italy.
Sensors (Basel). 2019 Aug 14;19(16):3545. doi: 10.3390/s19163545.
In this paper, a novel approach to implement a stray insensitive CMOS interface for differential capacitive sensors is presented. The proposed circuit employs, for the first time, second-generation voltage conveyors (VCIIs) and produces an output voltage proportional to differential capacitor changes. Using VCIIs as active devices inherently allows the circuit to process the signal in the current domain, and hence, to benefit from its intrinsic advantages, such as high speed and simple implementation, while still being able to natively interface with voltage mode signal processing stages at necessity. The insensitiveness to the effects of parasitic capacitances is achieved through a simple feedback loop. In addition, the proposed circuit shows a very simple and switch-free structure (which can be used for both linear and hyperbolic sensors), improving its accuracy. The readout circuit was designed in a standard 0.35 μm CMOS technology under a supply voltage of ±1.65 V. Before the integrated circuit fabrication, to produce tangible proof of the effectiveness of the proposed architecture, a discrete version of the circuit was also prototyped using AD844 and LF411 to implement a discrete VCII. The achieved measurement results are in good agreement with theory and simulations, showing a constant sensitivity up to 412 mV/pF, a maximum linearity error of 1.9%FS, and acknowledging a good behavior with low baseline capacitive sensors (10 pF in the proposed measurements). A final table is also given to summarize the key specs of the proposed work comparing them to the available literature.
本文提出了一种为差分电容传感器实现对杂散不敏感的CMOS接口的新颖方法。所提出的电路首次采用了第二代电压传输器(VCII),并产生与差分电容变化成比例的输出电压。使用VCII作为有源器件本质上使电路能够在电流域中处理信号,因此,能够受益于其固有的优势,如高速和实现简单,同时在必要时仍能够与电压模式信号处理阶段进行原生接口。通过一个简单的反馈回路实现了对寄生电容影响的不敏感性。此外,所提出的电路具有非常简单且无开关的结构(可用于线性和双曲线传感器),提高了其精度。读出电路采用标准的0.35μm CMOS工艺设计,电源电压为±1.65V。在集成电路制造之前,为了切实证明所提出架构的有效性,还使用AD844和LF411实现了一个离散的VCII,制作了该电路的离散版本原型。所获得的测量结果与理论和仿真结果吻合良好,显示出高达412mV/pF的恒定灵敏度、1.9%FS的最大线性误差,并表明对于低基线电容传感器(在所提出的测量中为10pF)具有良好的性能。还给出了一个最终表格,总结了所提出工作的关键规格,并将其与现有文献进行了比较。