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长寿命、可转移的碳化硅纳米薄膜用于可植入的柔性电子学。

Long-Lived, Transferred Crystalline Silicon Carbide Nanomembranes for Implantable Flexible Electronics.

机构信息

Queensland Micro and Nanotechnology Centre , Griffith University , Brisbane , Queensland 4111 , Australia.

Center for Bio-Integrated Electronics , Northwestern University , Evanston , Illinois 60208 , United States.

出版信息

ACS Nano. 2019 Oct 22;13(10):11572-11581. doi: 10.1021/acsnano.9b05168. Epub 2019 Aug 26.

DOI:10.1021/acsnano.9b05168
PMID:31433939
Abstract

Implantable electronics are of great interest owing to their capability for real-time and continuous recording of cellular-electrical activity. Nevertheless, as such systems involve direct interfaces with surrounding biofluidic environments, maintaining their long-term sustainable operation, without leakage currents or corrosion, is a daunting challenge. Herein, we present a thin, flexible semiconducting material system that offers attractive attributes in this context. The material consists of crystalline cubic silicon carbide nanomembranes grown on silicon wafers, released and then physically transferred to a final device substrate (, polyimide). The experimental results demonstrate that SiC nanomembranes with thicknesses of 230 nm do not experience the hydrolysis process (, the etching rate is 0 nm/day at 96 °C in phosphate-buffered saline (PBS)). There is no observable water permeability for at least 60 days in PBS at 96 °C and non-Na ion diffusion detected at a thickness of 50 nm after being soaked in 1× PBS for 12 days. These properties enable Faradaic interfaces between active electronics and biological tissues, as well as multimodal sensing of temperature, strain, and other properties without the need for additional encapsulating layers. These findings create important opportunities for use of flexible, wide band gap materials as essential components of long-lived neurological and cardiac electrophysiological device interfaces.

摘要

由于能够实时、连续记录细胞电活动,植入式电子设备引起了广泛关注。然而,由于这些系统涉及与周围生物流体环境的直接接口,因此长期可持续运行而不发生漏电流或腐蚀是一项艰巨的挑战。在此,我们提出了一种薄而灵活的半导体材料系统,在这种情况下具有吸引力。该材料由在硅片上生长的立方晶体碳化硅纳米膜组成,将其释放并物理转移到最终的器件基底(聚酰亚胺)上。实验结果表明,厚度为 230nm 的 SiC 纳米膜不会经历水解过程(在 96°C 的磷酸盐缓冲盐水中的蚀刻速率为 0nm/天)。在 96°C 的 PBS 中至少 60 天内没有观察到水的可透性,并且在浸泡在 1×PBS 中 12 天后,在 50nm 厚的情况下没有检测到非 Na 离子扩散。这些特性使得在活性电子和生物组织之间形成法拉第界面以及对温度、应变和其他特性的多模态感测成为可能,而无需额外的封装层。这些发现为使用灵活的宽带隙材料作为长期神经和心脏电生理设备接口的重要组成部分创造了重要机会。

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