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利用现代高压电子显微镜探测微米厚氮化镓薄膜中的晶体位错

Probing Crystal Dislocations in a Micrometer-Thick GaN Film by Modern High-Voltage Electron Microscopy.

作者信息

Sato Kazuhisa, Yasuda Hidehiro

机构信息

Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, 7-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan.

Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan.

出版信息

ACS Omega. 2018 Oct 18;3(10):13524-13529. doi: 10.1021/acsomega.8b02078. eCollection 2018 Oct 31.

DOI:10.1021/acsomega.8b02078
PMID:31458059
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6644655/
Abstract

We report on extreme penetration power of relativistic electrons in a micrometer-thick gallium nitride epitaxial film and its application to probing threading dislocations, which were introduced during crystal growth. Maximum usable thickness of the specimen was quantitatively evaluated using high-voltage transmission electron microscopy (TEM) operating at 1 MV. The width of dislocation images was used as a measure for the evaluation of usable thickness. Superior maximum usable thickness was obtained in scanning transmission electron microscopy (STEM) than in TEM mode; the results were 6.9 μm for STEM and 4.4 μm for TEM. In STEM, dislocations can be imaged with an almost constant width of 15-20 nm in a wide thickness range 1-4 μm. The latest high-voltage STEM is thus useful for observing dislocations in micrometer-thick inorganic materials.

摘要

我们报道了相对论电子在微米厚的氮化镓外延膜中的极强穿透能力及其在探测晶体生长过程中引入的位错方面的应用。使用工作在1兆伏的高压透射电子显微镜（TEM）对样品的最大可用厚度进行了定量评估。位错图像的宽度被用作评估可用厚度的指标。扫描透射电子显微镜（STEM）模式下获得的最大可用厚度优于TEM模式；STEM的结果为6.9微米，TEM为4.4微米。在STEM中，在1 - 4微米的宽厚度范围内，位错能够以15 - 20纳米几乎恒定的宽度成像。因此，最新的高压STEM对于观察微米厚无机材料中的位错很有用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9388/6644655/0121c3f114a5/ao-2018-02078t_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9388/6644655/7c6429f1efed/ao-2018-02078t_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9388/6644655/fd9c189dfb8d/ao-2018-02078t_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9388/6644655/9fb6d191109e/ao-2018-02078t_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9388/6644655/466cd223e1a2/ao-2018-02078t_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9388/6644655/ab3fb27615b3/ao-2018-02078t_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9388/6644655/a62752802411/ao-2018-02078t_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9388/6644655/0121c3f114a5/ao-2018-02078t_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9388/6644655/7c6429f1efed/ao-2018-02078t_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9388/6644655/fd9c189dfb8d/ao-2018-02078t_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9388/6644655/9fb6d191109e/ao-2018-02078t_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9388/6644655/466cd223e1a2/ao-2018-02078t_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9388/6644655/ab3fb27615b3/ao-2018-02078t_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9388/6644655/a62752802411/ao-2018-02078t_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9388/6644655/0121c3f114a5/ao-2018-02078t_0007.jpg

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本文引用的文献

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Microscopy (Oxf). 2014 Oct;63(5):345-55. doi: 10.1093/jmicro/dfu020. Epub 2014 Jun 2.
3
Lorentzian-like image blur of gold nanoparticles on thick amorphous silicon films in ultra-high-voltage transmission electron microscopy.
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Microscopy (Oxf). 2013;62(5):521-31. doi: 10.1093/jmicro/dft031. Epub 2013 May 14.
4
Diffraction contrast STEM of dislocations: imaging and simulations.位错的衍衬 STEM 成像与模拟。
Ultramicroscopy. 2011 Aug-Oct;111(9-10):1483-7. doi: 10.1016/j.ultramic.2011.07.001. Epub 2011 Jul 19.