Sato Kazuhisa, Yasuda Hidehiro
Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, 7-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan.
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan.
ACS Omega. 2020 Jan 8;5(3):1457-1462. doi: 10.1021/acsomega.9b03028. eCollection 2020 Jan 28.
Low-temperature crystal defect dynamics in Si has been studied by a newly developed cryo-high-voltage electron microscopy. The planar {113} defects of self-interstitial atoms were introduced at 94 K by 1 MeV electron irradiation with damage higher than 0.42 displacements per atom (dpa), unlike past findings. The defects once grew and then shrunk during the observation. We show that the nucleation and the dissociation dynamics of the {113} defects can be attributed to an athermal process, which is deduced from anomalously fast diffusion of self-interstitial atoms at a low temperature.
利用新开发的低温高压电子显微镜对硅中的低温晶体缺陷动力学进行了研究。与以往的研究结果不同，通过1兆电子伏电子辐照在94K下引入了损伤高于0.42原子位移数（dpa）的自间隙原子平面{113}缺陷。在观察过程中，这些缺陷先生长然后收缩。我们表明，{113}缺陷的成核和解离动力学可归因于一个非热过程，这是由自间隙原子在低温下异常快速的扩散推导出来的。
