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用于高性能析氢电催化剂的二硒化钼层的简便合成

Facile Synthesis of Molybdenum Diselenide Layers for High-Performance Hydrogen Evolution Electrocatalysts.

作者信息

Vikraman Dhanasekaran, Hussain Sajjad, Akbar Kamran, Adaikalam Kathalingam, Lee Seung Hu, Chun Seung-Hyun, Jung Jongwan, Kim Hyun-Seok, Park Hui Joon

机构信息

Department of Energy Systems Research and Department of Electrical and Computer Engineering, Ajou University, 206 Worldcup-ro, Suwon 16499, Korea.

Division of Electronics and Electrical Engineering and Millimeter-wave Innovation Technology (MINT) Research Center, Dongguk University-Seoul, 30 Pildong-ro 1 gil, Jung-gu, Seoul 04620, Korea.

出版信息

ACS Omega. 2018 May 30;3(5):5799-5807. doi: 10.1021/acsomega.8b00459. eCollection 2018 May 31.

DOI:10.1021/acsomega.8b00459
PMID:31458780
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6641717/
Abstract

A cost-effective solution-based synthesis route to grow MoSe thin films with vertically aligned atomic layers, thereby maximally exposing the edge sites on the film surface as well as enhancing charge transport to the electrode, is demonstrated for hydrogen evolution reaction. The surface morphologies of thin films are investigated by scanning electron microscopy and atomic force microscopy, and transmission electron microscopy analyses confirm the formation of the vertically aligned layered structure of MoSe in those films, with supporting evidences obtained by Raman. Additionally, their optical and compositional properties are investigated by photoluminescence and X-ray photoelectron spectroscopy, and their electrical properties are evaluated using bottom-gate field-effect transistors. The resultant pristine MoSe thin film exhibited low overpotential of 88 mV (at 10 mA·cm) and a noticeably high exchange current density of 0.845 mA·cm with excellent stability, which is superior to most of other reported MoS or MoSe-based catalysts, even without any other strategies such as doping, phase transformation, and integration with other materials.

摘要

展示了一种基于成本效益解决方案的合成路线，用于生长具有垂直排列原子层的MoSe薄膜，从而最大程度地暴露薄膜表面的边缘位点，并增强向电极的电荷传输，用于析氢反应。通过扫描电子显微镜和原子力显微镜研究薄膜的表面形貌，透射电子显微镜分析证实了这些薄膜中MoSe垂直排列的层状结构的形成，拉曼光谱也提供了支持证据。此外，通过光致发光和X射线光电子能谱研究它们的光学和组成性质，并使用底栅场效应晶体管评估其电学性质。所得的原始MoSe薄膜在10 mA·cm时表现出88 mV的低过电位和0.845 mA·cm的明显高交换电流密度，具有出色的稳定性，即使没有任何其他策略，如掺杂、相变和与其他材料集成，也优于大多数其他报道的基于MoS或MoSe的催化剂。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9501/6641717/a592838e802e/ao-2018-004598_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9501/6641717/2e545ff44d5c/ao-2018-004598_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9501/6641717/65f2fbb37268/ao-2018-004598_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9501/6641717/a2e232d708e6/ao-2018-004598_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9501/6641717/a592838e802e/ao-2018-004598_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9501/6641717/2e545ff44d5c/ao-2018-004598_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9501/6641717/65f2fbb37268/ao-2018-004598_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9501/6641717/a2e232d708e6/ao-2018-004598_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9501/6641717/a592838e802e/ao-2018-004598_0004.jpg

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