用于快速光电探测器的高度结晶的化学气相沉积生长多层二硒化钼薄膜晶体管
Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector.
作者信息
Jung Chulseung, Kim Seung Min, Moon Hyunseong, Han Gyuchull, Kwon Junyeon, Hong Young Ki, Omkaram Inturu, Yoon Youngki, Kim Sunkook, Park Jozeph
机构信息
Multi-Functional Nano/Bio Electronics Lab., Kyung Hee University, Gyeonggi, 446-701, Republic of Korea.
Carbon Convergence Materials Research Center, Korea Institute of Science and Technology, Wanju-gun 565-905, Republic of Korea.
出版信息
Sci Rep. 2015 Oct 19;5:15313. doi: 10.1038/srep15313.
Hexagonal molybdenum diselenide (MoSe2) multilayers were grown by chemical vapor deposition (CVD). A relatively high pressure (>760 Torr) was used during the CVD growth to achieve multilayers by creating multiple nuclei based on the two-dimensional crystal growth model. Our CVD-grown multilayer MoSe2 thin-film transistors (TFTs) show p-type-dominant ambipolar behaviors, which are attributed to the formation of Se vacancies generated at the decomposition temperature (650 °C) after the CVD growth for 10 min. Our MoSe2 TFT with a reasonably high field-effect mobility (10 cm(2)/V · s) exhibits a high photoresponsivity (93.7 A/W) and a fast photoresponse time (τ(rise) ~ 0.4 s) under the illumination of light, which demonstrates the practical feasibility of multilayer MoSe2 TFTs for photodetector applications.
通过化学气相沉积（CVD）生长出六方相二硒化钼（MoSe₂）多层膜。在CVD生长过程中使用了相对较高的压力（>760 Torr），根据二维晶体生长模型通过产生多个晶核来实现多层膜的生长。我们通过CVD生长的多层MoSe₂薄膜晶体管（TFT）表现出以p型为主的双极性行为，这归因于在CVD生长10分钟后于分解温度（650 °C）产生的硒空位的形成。我们具有合理高场效应迁移率（10 cm²/V·s）的MoSe₂ TFT在光照下表现出高光响应性（93.7 A/W）和快速光响应时间（τ(rise) ~ 0.4 s），这证明了多层MoSe₂ TFT用于光探测器应用的实际可行性。
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