Ndione Paul F, Ratcliff Erin L, Dey Suhash R, Warren Emily L, Peng Haowei, Holder Aaron M, Lany Stephan, Gorman Brian P, Al-Jassim Mowafak M, Deutsch Todd G, Zakutayev Andriy, Ginley David S
Materials Science Center, National Renewable Energy Laboratory, Golden, Colorado 80401, United States.
Department of Materials Science and Engineering, The University of Arizona, Tucson, Arizona 85721, United States.
ACS Omega. 2019 Apr 24;4(4):7436-7447. doi: 10.1021/acsomega.8b03347. eCollection 2019 Apr 30.
We used high-throughput experimental screening methods to unveil the physical and chemical properties of Mn Zn O wurtzite alloys and identify their appropriate composition for effective water splitting application. The Mn Zn O thin films were synthesized using combinatorial pulsed laser deposition, permitting for characterization of a wide range of compositions with varying from 0 to 1. The solubility limit of ZnO in MnO was determined using the disappearing phase method from X-ray diffraction and X-ray fluorescence data and found to increase with decreasing substrate temperature due to kinetic limitations of the thin-film growth at relatively low temperature. Optical measurements indicate the strong reduction of the optical band gap down to 2.1 eV at = 0.5 associated with the rock salt-to-wurtzite structural transition in Mn Zn O alloys. Transmission electron microscopy results show evidence of a homogeneous wurtzite alloy system for a broad range of Mn Zn O compositions above = 0.4. The wurtzite Mn ZnO samples with the 0.4 < < 0.6 range were studied as anodes for photoelectrochemical water splitting, with a maximum current density of 340 μA cm for 673 nm-thick films. These Mn Zn O films were stable in pH = 10, showing no evidence of photocorrosion or degradation after 24 h under water oxidation conditions. Doping Mn Zn O materials with Ga dramatically increases the electrical conductivity of Mn Zn O up to ∼1.9 S/cm for = 0.48, but these doped samples are not active in water splitting. Mott-Schottky and UPS/XPS measurements show that the presence of dopant atoms reduces the space charge region and increases the number of mid-gap surface states. Overall, this study demonstrates that Mn Zn O alloys hold promise for photoelectrochemical water splitting, which could be enhanced with further tailoring of their electronic properties.
我们采用高通量实验筛选方法来揭示MnZnO纤锌矿合金的物理和化学性质,并确定其用于有效水分解应用的合适成分。使用组合脉冲激光沉积法合成了MnZnO薄膜,从而能够对成分范围从0到1变化的多种成分进行表征。利用X射线衍射和X射线荧光数据的消失相法确定了ZnO在MnO中的溶解度极限,发现由于在相对低温下薄膜生长的动力学限制,其溶解度极限随衬底温度降低而增加。光学测量表明,在MnZnO合金中,当 = 0.5时,光学带隙强烈减小至2.1 eV,这与岩盐到纤锌矿的结构转变有关。透射电子显微镜结果表明,对于成分大于 = 0.4的广泛MnZnO成分范围,存在均匀的纤锌矿合金体系。研究了成分范围在0.4 < < 0.6的纤锌矿MnZnO样品作为光电化学水分解的阳极,对于673 nm厚的薄膜,最大电流密度为340 μA/cm²。这些MnZnO薄膜在pH = 10时稳定,在水氧化条件下24小时后没有光腐蚀或降解的迹象。用Ga掺杂MnZnO材料可将MnZnO的电导率显著提高至 = 0.48时的约1.9 S/cm,但这些掺杂样品在水分解中没有活性。莫特-肖特基和UPS/XPS测量表明,掺杂原子的存在减少了空间电荷区并增加了带隙中部表面态的数量。总体而言,这项研究表明MnZnO合金在光电化学水分解方面具有潜力,通过进一步调整其电子性质可得到增强。