Nie Guozheng, Dong Biao, Wu Shaobing, Zhan Shiping, Xu Ying, Sheng Wei, Liu Yunxin, Wu Xiaofeng
College of Mathematics and Statistics, Hunan University of Commerce, Changsha 410205, China.
School of Physics and Electronic Science, Hunan University of Science and Technology, Xiangtan 411201, China.
ACS Omega. 2019 May 15;4(5):8506-8511. doi: 10.1021/acsomega.8b02726. eCollection 2019 May 31.
The modulation of threshold voltage ( ) of organic thin-film transistors (OTFTs) was investigated by embedding a thin CuO layer between the two semiconductor layers. The results showed that the of OTFTs with a CuO layer can be effectively tuned by controlling the positive gate-to-source voltage ( ) under stress of gate-to-source voltages. The shifts from -3.67 to -0.82 V when the positive varies from 30 to 50 V. This can be explained by the mechanism of trapping electrons at the interface between the CuO charge-separation layer and the active layer. To confirm the role of the CuO layer acting as the charge-separation source, two organic thin-film diodes, indium-tin oxide(ITO)/tris (8-quinolinolato) aluminum(III) (Alq)/pentacene/Al (inverted-stack diode) and ITO/Alq/CuO/pentacene/Al (inverted-stack diode with a CuO layer), were fabricated and their diode current characteristics were measured. For the second device, a large current flow was observed at positive bias on the ITO electrodes, which is ascribed to the internal bipolar charge separation within the added CuO zone.
通过在两个半导体层之间嵌入一层薄的CuO层，研究了有机薄膜晶体管（OTFT）阈值电压（ ）的调制情况。结果表明，在栅源电压应力下，通过控制正的栅源电压（ ），可以有效地调节具有CuO层的OTFT的 。当正的 从30 V变化到50 V时， 从-3.67 V变为-0.82 V。这可以通过在CuO电荷分离层与有源层之间的界面处捕获电子的机制来解释。为了确认CuO层作为电荷分离源的作用，制备了两个有机薄膜二极管，氧化铟锡（ITO）/三（8-羟基喹啉）铝（III）（Alq）/并五苯/Al（反向堆叠二极管）和ITO/Alq/CuO/并五苯/Al（具有CuO层的反向堆叠二极管），并测量了它们的二极管电流特性。对于第二个器件，在ITO电极上的正偏压下观察到大量电流流动，这归因于添加的CuO区域内的内部双极电荷分离。
