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用于多功能有机薄膜晶体管的紫外光激活电荷调制异质结

Ultraviolet Light-Activated Charge Modulation Heterojunction for Versatile Organic Thin Film Transistors.

作者信息

Wu Fu-Chiao, Li Pei-Rong, Lin Bo-Ren, Wu Ren-Jie, Cheng Horng-Long, Chou Wei-Yang

机构信息

Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan.

出版信息

ACS Appl Mater Interfaces. 2021 Sep 29;13(38):45822-45832. doi: 10.1021/acsami.1c12390. Epub 2021 Sep 14.

Abstract

Organic thin film transistors (OTFTs) are a promising technology for the application of photosensors in smart wearable devices. Light-induced electrical behavior of OTFTs is explored to achieve diverse functional requirements. In most studies, OTFTs show an increased drain current () under light irradiation. Here, we use an ultraviolet (UV) light absorption top layer, tris(8-hydroxyquinoline) aluminum (Alq3), to improve the UV light response of poly(3-hexylthiophene-2,5-diyl) (P3HT)-based OTFTs. Unexpectedly, the Alq3-covered device operated at the accumulation mode demonstrates a decreased during the UV light irradiation. ,'-Ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI, electron acceptor), pentacene (electron donor), and lithium fluoride (LiF, insulator) as an interlayer were inserted between the P3HT and the Alq3 layers. The PTCDI/Alq3-covered device also shows an unusual decrease in under the UV light but an increase in under the green light. The pentacene/Alq3-covered device shows an increased during the UV light irradiation and, unexpectedly, a memory effect in after removing the UV light. The LiF/Alq3-covered device exhibits an electrical behavior similar to the bare P3HT-based device under the UV light. Results of spectroscopic analyses and theoretical calculations have shown that the occurrence of charge transfer at heterojunctions during the UV light irradiation causes charge modulation in the multilayered P3HT-based OTFTs and then results in an unusual decrease or memory effect in . In addition, the unexpected reduction can be observed in the Alq3-covered poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-]thiophene]-based OTFTs under UV light. The features, including opposite electrical responses to different wavelengths of light and optical memory effect, provide the multilayered P3HT-based OTFTs with potential for various optical applications, such as image recognition devices, optical logic gates, light dosimeters, and optical synapses.

摘要

有机薄膜晶体管(OTFT)是一种很有前景的技术,可用于智能可穿戴设备中的光传感器应用。人们探索了OTFT的光致电学行为,以满足各种功能需求。在大多数研究中,OTFT在光照射下漏极电流()会增加。在此,我们使用一种紫外线(UV)吸收顶层——三(8-羟基喹啉)铝(Alq3),来改善基于聚(3-己基噻吩-2,5-二基)(P3HT)的OTFT的紫外线响应。出乎意料的是,在积累模式下工作的覆盖有Alq3的器件在紫外线照射期间显示出漏极电流降低。在P3HT和Alq3层之间插入了作为中间层的1,1'-二十三烷基-3,4,9,10-苝四羧酸二酰亚胺(PTCDI,电子受体)、并五苯(电子供体)和氟化锂(LiF,绝缘体)。覆盖有PTCDI/Alq3的器件在紫外线照射下也显示出漏极电流异常降低,但在绿光照射下漏极电流增加。覆盖有并五苯/Alq3的器件在紫外线照射期间显示出漏极电流增加,并且出乎意料的是,在去除紫外线后漏极电流存在记忆效应。覆盖有LiF/Alq3的器件在紫外线照射下表现出与基于裸P3HT的器件相似的电学行为。光谱分析和理论计算结果表明,紫外线照射期间异质结处电荷转移的发生导致多层基于P3HT的OTFT中的电荷调制,进而导致漏极电流出现异常降低或记忆效应。此外,在紫外线照射下,在覆盖有Alq3的聚[2,5-双(3-十四烷基噻吩-2-基)噻吩并[3,2-b]噻吩]基OTFT中可以观察到意外的漏极电流降低。这些特性,包括对不同波长光的相反电学响应和光学记忆效应,为多层基于P3HT的OTFT在各种光学应用中提供了潜力,如图像识别设备、光学逻辑门、光剂量计和光学突触。

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