On the Dynamics of Intrinsic Carbon in Copper during the Annealing Phase of Chemical Vapor Deposition Growth of Graphene.

In chemical vapor deposition (CVD) growth of graphene, intrinsic carbon in copper has been shown to play a role, especially during the nucleation phase. Here, we report experimental results on depletion of carbon from the bulk of a Cu foil to its surface at different hydrogen pressures, which explain new aspects of the interplay between hydrogen and intrinsic carbon prior to growth. We observed that rising H pressure boosts carbon depletion to the surface, but at the same time, at elevated H pressures, the graphitic film formed on the Cu surface is etched away at a faster rate. This effect led us to practice annealing of copper under high hydrogen pressure as an approach to decrease the total content of carbon in the copper foil and consequently reducing the nucleation density of graphene flakes. These results enhance our understanding about the role of H in the CVD process and explain some of the inconsistencies among the earlier reports.