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通过在BaCaTiZrO中进行铒掺杂调制空位控制来增强上转换光致发光和多电学性能

Boosting Upconversion Photoluminescence and Multielectrical Properties via Er-Doping-Modulated Vacancy Control in BaCaTiZrO.

作者信息

Liu Chunwen, Wang Quanlin, Wu Xiao, Sa Baisheng, Sun Hailing, Luo Laihui, Lin Cong, Zheng Xinghua, Lin Tengfei, Sun Zhimei

机构信息

Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China.

Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China.

出版信息

ACS Omega. 2019 Jun 24;4(6):11004-11013. doi: 10.1021/acsomega.9b01391. eCollection 2019 Jun 30.

Abstract

The lead-free 0.5(BaCa)TiO-0.5Ba(TiZr)O (BCTZ) ceramics with Er doping have shown good upconversion photoluminescence (PL) and desirable optical temperature sensing properties. To bridge a relationship between the structure/intrinsic defects and properties of rare-earth-doped ferroelectrics, we designed and fabricated a series of BCTZ ceramics doped with 1 mol % Er by combining the first-principles calculations and experimental measurements. Theoretically, we discovered that Er can occupy both A sites (i.e., replacing Ba or Ca) and B sites (i.e., replacing Ti or Zr) in the BCTZ lattice and highlighted that the Er-doping-induced vacancy concentration decreases for both the oxygen vacancies ( ) and cation vacancies ( ). Experimentally, the enhanced PL performance and the dielectric, ferroelectric, and piezoelectric properties of the Er-doped BCTZ ceramics have been observed. Finally, the physical origin of Er-induced property enhancement in BCTZ has been elaborated according to the charge density and chemical bonding analysis. These results open up a path to investigate the effects of site substitution and vacancies on optoelectronic properties of multifunctional rare-earth-doped ferroelectrics.

摘要

掺铒的无铅0.5(BaCa)TiO-0.5Ba(TiZr)O (BCTZ)陶瓷表现出良好的上转换光致发光(PL)和理想的光学温度传感特性。为了建立稀土掺杂铁电体的结构/本征缺陷与性能之间的关系,我们结合第一性原理计算和实验测量,设计并制备了一系列掺杂1 mol%铒的BCTZ陶瓷。理论上,我们发现铒可以占据BCTZ晶格中的A位(即取代Ba或Ca)和B位(即取代Ti或Zr),并强调铒掺杂引起的氧空位()和阳离子空位()的空位浓度均降低。实验上,观察到掺铒BCTZ陶瓷的PL性能以及介电、铁电和压电性能增强。最后,根据电荷密度和化学键分析阐述了铒在BCTZ中引起性能增强的物理起源。这些结果为研究位点取代和空位对多功能稀土掺杂铁电体光电性能的影响开辟了一条途径。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/218c/6648785/268fc12864c0/ao-2019-013914_0001.jpg

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