Marques Larissa S, Weichelt Michelle, Kuhfuß Michel, Rambo Carlos R, Fey Tobias
Graduate Program on Materials Science and Engineering, Federal University of Santa Catarina, Florianópolis 88040-900, Brazil.
Department of Material Science and Engineering, Institute of Glass and Ceramics, Friedrich-Alexander Universität Erlangen-Nürnberg, Martensstr. 5, 91058 Erlangen, Germany.
Materials (Basel). 2024 Jul 1;17(13):3228. doi: 10.3390/ma17133228.
To meet the current demand for lead-free piezoelectric ceramics, a novel sol-gel synthesis route is presented for the preparation of BaCaTiZrO doped with cerium (Ce = 0, 0.01, and 0.02 mol%) and vanadium (V = 0, 0.3, and 0.4 mol%). X-ray diffraction patterns reveal the formation of a perovskite phase (space group 4) for all samples after calcination at 800 °C and sintering at 1250, 1350, and 1450 °C, where it is proposed that both dopants occupy the B site. Sintering studies show that V doping allows the sintering temperature to be reduced to at least 1250 °C. Undoped BCZT samples sintered at the same temperature show reduced functional properties compared to V-doped samples, i.e., d values increase by an order of magnitude with doping. The dissipation factor tan δ decreases with increasing sintering temperature for all doping concentrations, while the Curie temperature T increases for all V-doped samples, reaching 120 °C for high-concentration co-doped samples. All results indicate that vanadium doping can facilitate the processing of BCZT at lower sintering temperatures without compromising performance while promoting thermal property stability.
为满足当前对无铅压电陶瓷的需求，本文提出了一种新颖的溶胶-凝胶合成路线，用于制备掺杂铈（Ce = 0、0.01和0.02 mol%）和钒（V = 0、0.3和0.4 mol%）的BaCaTiZrO。X射线衍射图谱表明，所有样品在800°C煅烧并在1250、1350和1450°C烧结后形成了钙钛矿相（空间群4），推测两种掺杂剂均占据B位。烧结研究表明，V掺杂可使烧结温度降低至至少1250°C。在相同温度下烧结的未掺杂BCZT样品与V掺杂样品相比，功能性能有所降低，即掺杂后d值增加了一个数量级。对于所有掺杂浓度，损耗因子tan δ随烧结温度升高而降低，而所有V掺杂样品的居里温度T升高，高浓度共掺杂样品的居里温度达到120°C。所有结果表明，钒掺杂可在不影响性能的情况下，促进BCZT在较低烧结温度下的加工，同时提高热性能稳定性。
