基于 ZnO/GaN 纳米级 p-n 结的自供电、超快、可见盲紫外探测和光逻辑运算。

Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions.

机构信息

State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing, PR China.

出版信息

Adv Mater. 2011 Feb 1;23(5):649-53. doi: 10.1002/adma.201003156. Epub 2010 Dec 15.

DOI:10.1002/adma.201003156

Abstract

Ultrafast-response (20 μs) UV detectors, which are visible-blind and self-powered, in devices where an n-type ZnO nanowire partially lies on a p-type GaN film, are demonstrated. Moreover, a CdSe-nanowire red-light detector powered by a nanoscale ZnO/GaN photovoltaic cell is also demonstrated, which extends the device function to a selective multiwavelength photodetector and shows the function of an optical logical AND gate.

摘要

本文展示了超快响应（20 μs）的紫外光探测器，其具有可见光盲和自供电功能，器件中 n 型氧化锌纳米线部分位于 p 型氮化镓薄膜上。此外，本文还展示了一种由纳米尺度 ZnO/GaN 光伏电池供电的 CdSe 纳米线红光探测器，这将器件功能扩展为一种选择性多波长光电探测器，并展示了光学逻辑与门的功能。