Sarkar A, Chakrabarti M, Sanyal D, Gogurla N, Kumar P, Brusa R S, Hugenschmidt C
Department of Physics, Bangabasi Morning College, 19 Rajkumar Chakraborty Sarani, Kolkata 700 009, India.
J Phys Condens Matter. 2020 Feb 20;32(8):085703. doi: 10.1088/1361-648X/ab3f74. Epub 2019 Aug 29.
Depth resolved positron annihilation spectroscopy (PAS) has been employed to characterize the 1.2 MeV Ar and 800 keV O ion beam induced defects in ZnO. The first extraordinary result was the observation of defects in ion beam irradiated ZnO beyond the maximum penetration depth of the respective ions. The positron annihilation results revealed the formation of vacancy clusters consisting of both V and V in ZnO which are saturated at a threshold radiation dose (defined as nuclear energy loss, S × fluence). From the photoluminescence (PL) spectra it has been observed that the PL intensity at the band edge degraded with the increase of open volume defects in ZnO. The evolution of the 2.4 eV PL, which is linked with the oxygen vacancies, is more significant due to Ar irradiation than the oxygen irradiation.
深度分辨正电子湮没谱（PAS）已被用于表征1.2 MeV 氩离子和800 keV 氧离子束在ZnO中诱导产生的缺陷。第一个非凡的结果是在离子束辐照的ZnO中观察到了超出相应离子最大穿透深度的缺陷。正电子湮没结果表明，在ZnO中形成了由V和V组成的空位团簇，这些空位团簇在阈值辐射剂量（定义为核能损失，S×注量）下达到饱和。从光致发光（PL）光谱中观察到，随着ZnO中开放体积缺陷的增加，带边处的PL强度降低。与氧空位相关的2.4 eV PL的演变，由于氩离子辐照比氧离子辐照更为显著。
