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通过兆电子伏特铜离子辐照实现ZnO/ITO中缺陷介导的光致发光增强。

Defect-mediated photoluminescence enhancement in ZnO/ITO via MeV Cu ion irradiation.

作者信息

Rehman Khalil Ur, Zubair Muhammad, Hassan Ali, Khan M Imtiaz, Ahmad Ishaq, Ahmad Pervaiz, Ali Hazrat, Ali Tariq, Haris Muhammad

机构信息

Institute of Metal Research, Chinese Academy of Sciences, University of Science and Technology of China, China; National Center for Physics, Islamabad, 44000, Pakistan.

Center of Excellence in Solid State Physics, University of the Punjab, Lahore, Pakistan; College of Materials Science and Engineering, Key Laboratory of Advanced Functional Materials, Ministry of Education, Beijing, University of Technology, Beijing, 100124, China; Department of Physics, Abbottabad University of Science and Technology, Havelian, Khyber Pakhtunkhwa, Pakistan.

出版信息

Appl Radiat Isot. 2021 Mar;169:109461. doi: 10.1016/j.apradiso.2020.109461. Epub 2020 Dec 27.

DOI:10.1016/j.apradiso.2020.109461
PMID:33378724
Abstract

Zinc oxide (ZnO) nanowires play a pivotal role in the nanoworld due to their broad range of characteristics and applications. In this work, structural and optical properties of ZnO nanowires grown on indium doped tin oxide (ITO) coated glass have been modified by copper (Cu) ions irradiation at constant energy of 0.7 MeV. The X-ray diffraction (XRD), photoluminescence (PL), and field emission scanning electron microscope (FESEM) are used to examine changes in the nanowires. XRD results show that the crystallite size first decreases and then increases with high ion dose while peaks' intensity decreases continuously with increasing the dose. The absence of (102) plane after irradiation depicts the defects formation. FESEM clearly shows the damage that occurred in the density of nanowires and also depicts the reduced charging effect with increasing dose. The PL spectra indicate the strong near-band edge peak and green luminescence enhancement has been recorded due to low dose ion irradiation.

摘要

氧化锌(ZnO)纳米线因其广泛的特性和应用在纳米世界中发挥着关键作用。在这项工作中,通过在0.7 MeV恒定能量下用铜(Cu)离子辐照,对生长在氧化铟锡(ITO)涂层玻璃上的ZnO纳米线的结构和光学性质进行了改性。利用X射线衍射(XRD)、光致发光(PL)和场发射扫描电子显微镜(FESEM)来检测纳米线的变化。XRD结果表明,随着离子剂量的增加,微晶尺寸先减小后增大,而峰强度则不断降低。辐照后(102)面的消失表明形成了缺陷。FESEM清楚地显示了纳米线密度发生的损伤,并且还表明随着剂量增加充电效应降低。PL光谱表明由于低剂量离子辐照记录到了强的近带边峰和绿色发光增强。

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