Walter Schottky Institut, Physik Department & Center for Nanotechnology and Nanomaterials, Technische Universität München, Garching, D-85748, Germany.
Nanotechnology. 2019 Dec 6;30(49):495703. doi: 10.1088/1361-6528/ab3ef7. Epub 2019 Aug 28.
InGaAs nanowire (NW) arrays have emerged as important active materials in future photovoltaic and photodetector applications, due to their excellent electronic properties and tunable band gap. Here, we report a systematic investigation of the optical absorption characteristics of composition-tunable vertical InGaAs NW arrays. Using finite-difference time-domain simulations we first study the effect of variable composition (Ga-molar fraction) and NW array geometry (NW diameter, period, fill factor) on the optical generation rate. NWs with typical diameters in the range of ∼100-250 nm lead to generation rates higher than the equivalent bulk case for moderate fill factors (NW period of ∼0.3-0.8 μm), while slightly smaller fill factors and increased diameters are required to maintain high generation rates at increased Ga-molar fraction. The optical absorption was further measured using spectrally resolved ultraviolet-visible-near-infrared (UV-vis-NIR) spectroscopy on NW arrays transferred to transparent substrates. Interestingly, large variations in Ga-molar fraction (0 < x(Ga) < 0.5) have a negligible influence, while minute changes in NW diameter of less than ±20 nm affect the absorption spectra very strongly, leading to pronounced shifts in the peak absorption energies by more than ∼700 meV. These results clearly highlight the much larger sensitivity of the optical absorption behavior to geometric parameters rather than to variations in the electronic band gap of the underlying NW array.
InGaAs 纳米线(NW)阵列由于其优异的电子性能和可调谐的带隙,已成为未来光伏和光电探测器应用中的重要活性材料。在这里,我们报告了对组成可调谐垂直 InGaAs NW 阵列的光学吸收特性的系统研究。我们首先使用有限差分时域模拟研究了可变组成(Ga 摩尔分数)和 NW 阵列几何形状(NW 直径、周期、填充因子)对光生成率的影响。典型直径在 100-250nm 范围内的 NW 导致在中等填充因子(NW 周期约为 0.3-0.8μm)下的生成率高于等效体的生成率,而稍小的填充因子和增加的直径在增加 Ga 摩尔分数时需要保持高生成率。通过将 NW 阵列转移到透明衬底上的光谱分辨紫外-可见-近红外(UV-vis-NIR)光谱进一步测量了光学吸收。有趣的是,Ga 摩尔分数(0 < x(Ga)< 0.5)的大变化几乎没有影响,而 NW 直径的微小变化小于 ±20nm 会强烈影响吸收光谱,导致峰值吸收能量的显著偏移超过 ∼700meV。这些结果清楚地突出了光学吸收行为对几何参数的敏感性远大于对底层 NW 阵列的电子带隙变化的敏感性。