Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada, L8S4L7.
Nanotechnology. 2016 Aug 5;27(31):315202. doi: 10.1088/0957-4484/27/31/315202. Epub 2016 Jun 21.
A periodic array of vertical InSb nanowires (nws) was designed for photodetectors in the mid-wavelength infrared (MWIR) region (λ = 3-5 μm). Simulations, using the finite element method, were implemented to optimize the nw array geometrical parameters (diameter (D), period (P), and length (L)) for high optical absorptance, which exceeded that of a thin film of equal thickness. Our results showed HE1n resonances in InSb nw arrays can be tuned by adjusting D and P, thus enabling multispectral absorption throughout the near infrared to MWIR region. Optical absorptance was investigated for a practical photodetector consisting of a vertical InSb nw array embedded in bisbenzocyclobutene (BCB) as a support layer for an ultrathin Ni contact layer. Polarization sensitivity of the photodetector is examined.
周期性的垂直 InSb 纳米线(nws)阵列被设计用于中波红外(MWIR)区域(λ=3-5μm)的光电探测器。使用有限元方法进行了模拟,以优化 nw 阵列的几何参数(直径(D)、周期(P)和长度(L)),以实现高光吸收,超过了具有相同厚度的薄膜的光吸收。我们的结果表明,通过调整 D 和 P,可以调谐 InSb nw 阵列中的 HE1n 共振,从而实现近红外到 MWIR 区域的多光谱吸收。研究了由嵌入双苯并环丁烯(BCB)中的垂直 InSb nw 阵列组成的实用光电探测器的光吸收率,作为超薄 Ni 接触层的支撑层。还检查了光电探测器的偏振灵敏度。