Gu Yan, Liu Yu Shen, Yang Guofeng, Xie Feng, Zhu Chun, Yu Yingzhou, Zhang Xiumei, Lu Naiyan, Wang Yueke, Chen Guoqing
School of Internet of Things, Jiangnan University Wuxi 214122 China.
School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University Wuxi 214122 China
Nanoscale Adv. 2021 Mar 19;3(9):2649-2656. doi: 10.1039/d1na00127b. eCollection 2021 May 4.
A nanostructure of InGaN/GaN multiple quantum well (MQW) nanorods (NRs) was fabricated using top-down etching with self-organized nickel (Ni) nanoparticles as masks on the wafer. The optical properties of InGaN/GaN MQW NRs were discussed by experiment and theory from a light absorption perspective. Three-dimensional (3D) optical images of NRs were successfully obtained by confocal laser scanning microscopy (CLSM) for physical observation of the optical phenomenon of InGaN/GaN MQW NRs. Moreover, optical simulations were performed by COMSOL Multiphysics the three-dimensional finite-element method to explore the influences of NR geometrical parameters on optical absorption. The simulated results demonstrate that the absorption of NRs is higher than that of the film due to the waveguide properties of NRs resulting from their higher refractive index than embedding medium and higher aspect ratio than bulk. In addition, an increase in the diameter results in a red-shift of the absorption peak position of InGaN/GaN MQW NRs. The smaller pitch enhances the near-field coupling of the nanorods and broadens the absorption peak. These results clearly illustrate the optical properties of InGaN/GaN MQW NRs from the perspective of 3D confocal laser scanning microscopy. This work is promising for the applications of III-V optoelectronic devices.
采用自上而下的蚀刻方法，以自组装的镍（Ni）纳米颗粒为掩膜，在晶圆上制备了InGaN/GaN多量子阱（MQW）纳米棒（NRs）的纳米结构。从光吸收的角度，通过实验和理论探讨了InGaN/GaN MQW NRs的光学性质。利用共聚焦激光扫描显微镜（CLSM）成功获得了NRs的三维（3D）光学图像，用于对InGaN/GaN MQW NRs的光学现象进行物理观察。此外，通过COMSOL Multiphysics三维有限元方法进行了光学模拟，以探究NR几何参数对光吸收的影响。模拟结果表明，由于NRs的折射率高于嵌入介质且长径比高于体材料，其具有波导特性，使得NRs的吸收高于薄膜。此外，直径的增加导致InGaN/GaN MQW NRs吸收峰位置发生红移。较小的间距增强了纳米棒的近场耦合并拓宽了吸收峰。这些结果从3D共聚焦激光扫描显微镜的角度清楚地阐明了InGaN/GaN MQW NRs的光学性质。这项工作对于III-V族光电器件的应用具有重要意义。
