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合成反铁磁体中快速电流诱导的斯格明子运动。

Fast current-induced skyrmion motion in synthetic antiferromagnets.

作者信息

Pham Van Tuong, Sisodia Naveen, Di Manici Ilaria, Urrestarazu-Larrañaga Joseba, Bairagi Kaushik, Pelloux-Prayer Johan, Guedas Rodrigo, Buda-Prejbeanu Liliana D, Auffret Stéphane, Locatelli Andrea, Menteş Tevfik Onur, Pizzini Stefania, Kumar Pawan, Finco Aurore, Jacques Vincent, Gaudin Gilles, Boulle Olivier

机构信息

Université Grenoble Alpes, CNRS, CEA, SPINTEC, 38054 Grenoble, France.

Université Grenoble Alpes, CNRS, Institut Néel, 38042 Grenoble, France.

出版信息

Science. 2024 Apr 19;384(6693):307-312. doi: 10.1126/science.add5751. Epub 2024 Apr 18.

Abstract

Magnetic skyrmions are topological magnetic textures that hold great promise as nanoscale bits of information in memory and logic devices. Although room-temperature ferromagnetic skyrmions and their current-induced manipulation have been demonstrated, their velocity has been limited to about 100 meters per second. In addition, their dynamics are perturbed by the skyrmion Hall effect, a motion transverse to the current direction caused by the skyrmion topological charge. Here, we show that skyrmions in compensated synthetic antiferromagnets can be moved by current along the current direction at velocities of up to 900 meters per second. This can be explained by the cancellation of the net topological charge leading to a vanishing skyrmion Hall effect. Our results open an important path toward the realization of logic and memory devices based on the fast manipulation of skyrmions in tracks.

摘要

磁斯格明子是一种拓扑磁性纹理,在内存和逻辑设备中作为纳米级信息单元具有巨大潜力。尽管已经证明了室温铁磁斯格明子及其电流诱导操纵,但它们的速度一直限制在约每秒100米。此外,它们的动力学受到斯格明子霍尔效应的干扰,这是一种由斯格明子拓扑电荷引起的垂直于电流方向的运动。在此,我们表明,补偿合成反铁磁体中的斯格明子可以被电流沿电流方向以高达每秒900米的速度移动。这可以通过净拓扑电荷的抵消导致斯格明子霍尔效应消失来解释。我们的结果为基于在轨道中快速操纵斯格明子实现逻辑和存储设备开辟了一条重要途径。

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