Liu Ziji, Liu Detao, Chen Hao, Ji Long, Zheng Hualin, Gu Yiding, Wang Feng, Chen Zhi, Li Shibin
State Key Laboratory of Electronic Thin Films and Integrated Devices, and School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, Sichuan, China.
Department of Electrical & Computer Engineering, Center for Nanoscale Science & Engineering, University of Kentucky, Lexington, KY, 40506, USA.
Nanoscale Res Lett. 2019 Sep 2;14(1):304. doi: 10.1186/s11671-019-3134-4.
The trap-state density in perovskite films largely determines the photovoltaic performance of perovskite solar cells (PSCs). Increasing the crystal grain size in perovskite films is an effective method to reduce the trap-state density. Here, we have added NHSCN into perovskite precursor solution to obtain perovskite films with an increased crystal grain size. The perovskite with increased crystal grain size shows a much lower trap-state density compared with reference perovskite films, resulting in an improved photovoltaic performance in PSCs. The champion photovoltaic device has achieved a power conversion efficiency of 19.36%. The proposed method may also impact other optoelectronic devices based on perovskite films.
钙钛矿薄膜中的陷阱态密度在很大程度上决定了钙钛矿太阳能电池(PSC)的光伏性能。增加钙钛矿薄膜中的晶粒尺寸是降低陷阱态密度的有效方法。在此,我们将硫氰酸铵添加到钙钛矿前驱体溶液中,以获得具有更大晶粒尺寸的钙钛矿薄膜。与参考钙钛矿薄膜相比,晶粒尺寸增加的钙钛矿显示出低得多的陷阱态密度,从而提高了PSC的光伏性能。最佳光伏器件实现了19.36%的功率转换效率。所提出的方法也可能会影响其他基于钙钛矿薄膜的光电器件。