Zhang Jun-Jie, Guan Jie, Dong Shuai, Yakobson Boris I
School of Physics , Southeast University , Nanjing 211189 , China.
J Am Chem Soc. 2019 Sep 25;141(38):15040-15045. doi: 10.1021/jacs.9b03201. Epub 2019 Sep 12.
The realization of low-dimensional ferroelectrics is both fundamentally intriguing and practically appealing, to be used in nanoscale devices. Here, GeS and SnS nanowires are predicted to be one-dimensional (1D) ferroelectrics with inversion symmetry spontaneously broken by soft optical modes. Despite the low dimensionality, the estimated Curie point for GeS nanowires is above room temperature, benefiting experimental detection and suggesting realistic applications. To this end, further aspects of these 1D ferroelectrics are also examined, revealing the domain wall localization, switchable carrier mobility, and practically effective shieling by confining the nanowires inside the carbon nanotubes, all together potentially useful for nanoscale ferroelectric devices of broad interest.
低维铁电体的实现无论在基础研究方面还是实际应用方面都极具吸引力，可用于纳米级器件。在此，预测GeS和SnS纳米线为一维（1D）铁电体，其反演对称性会被软光学模式自发打破。尽管维度较低，但GeS纳米线的估计居里点高于室温，这有利于实验检测并暗示了其实际应用价值。为此，还研究了这些一维铁电体的其他方面，揭示了畴壁定位、可切换的载流子迁移率，以及通过将纳米线限制在碳纳米管内实现的实际有效的屏蔽效应，所有这些对于广泛关注的纳米级铁电器件都可能具有潜在用途。
