Japan Broadcasting Corporation (NHK), Science and Technology Research Laboratories, 1-10-11, Kinuta, Setagaya-ku, Tokyo, 157-8510, Japan.
Nippon Shokubai Co., Ltd., 5-8 Nishi Otabi-cho, Suita, Osaka, 564-8512, Japan.
Adv Mater. 2019 Oct;31(43):e1904201. doi: 10.1002/adma.201904201. Epub 2019 Sep 6.
Molecular n-dopants that can lower the electron injection barrier between organic semiconductors and electrodes are essential in present-day organic electronics. However, the development of stable molecular n-dopants remains difficult owing to their low ionization potential, which generally renders them unstable. It is shown that the stable bases widely used in organic synthesis as catalysts can lower the electron injection barrier similar to that in conventional n-doping in organic optoelectronic devices. In contrast to conventional n-doping, which is based on the electron transfer from dopants with low ionization potential, the reduction of the injection barrier caused by adding bases is determined by the formation of hydrogen bonds between the hosts and the bases, providing energy-level-independent electron injection. The observation of the efficient electron injection induced by hydrogen bonding affords new perspectives on the method for controlling the behavior of electrons unique to organic semiconductors.
在当今的有机电子学中，能够降低有机半导体和电极之间电子注入势垒的分子 n 型掺杂剂是必不可少的。然而，由于其较低的电离势，稳定的分子 n 型掺杂剂的发展仍然很困难，这通常使它们不稳定。结果表明，广泛用作有机合成催化剂的稳定碱可以降低电子注入势垒，类似于在有机光电设备中的传统 n 型掺杂。与基于低电离势掺杂剂的电子转移的传统 n 型掺杂不同，添加碱引起的注入势垒的降低取决于主体和碱之间氢键的形成，从而提供能级独立的电子注入。氢键诱导的高效电子注入的观察为控制有机半导体特有的电子行为的方法提供了新的视角。
